Comparison of electronic structure between monolayer silicenes on Ag (111)

doi:10.1088/1674-1056/24/8/087307

Abstract The electronic structures of monolayer silicenes (4×4 and √13×√13R13.9^o) grown on Ag (111) surface are studied by scanning tunneling spectroscopy (STS) and density functional theory (DFT) calculations. While both phases have similar electronic structures around the Fermi level, significant differences are observed in the higher energy unoccupied states. The DFT calculations show that the contributions of Si 3p_z orbitals to the unoccupied states are different because of their different buckled configurations.

Keywords: silicene electronic structure STM DFT

Received: 25 February 2015
Revised: 25 May 2015
Accepted manuscript online:

PACS:	73.22.-f	(Electronic structure of nanoscale materials and related systems)
	68.37.Ef	(Scanning tunneling microscopy (including chemistry induced with STM))
	61.46.-w	(Structure of nanoscale materials)
	81.05.Zx	(New materials: theory, design, and fabrication)

Fund: Project supported by the Ministry of Education, Culture, Sports, Science and Technology (MEXT) through Grants-in-Aid for Scientific Research (Grant Nos. 24241040 and 25110008) and the World Premier International Research Center Initiative (WPI), MEXT, Japan.

Corresponding Authors: Chun-Liang Lin, Noriaki Takagi
E-mail: clin@ams.k.u-tokyo.ac.jp;n-takagi@k.u-tokyo.ac.jp

Cite this article:

Chun-Liang Lin, Ryuichi Arafune, Maki Kawai, Noriaki Takagi Comparison of electronic structure between monolayer silicenes on Ag (111) 2015 Chin. Phys. B 24 087307

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