Progress in research of GaN-based LEDs fabricated on SiC substrate

doi:10.1088/1674-1056/24/6/067305

Abstract

The influence of buffer layer growth conditions on the crystal quality and residual stress of GaN film grown on silicon carbide substrate is investigated. It is found that the AlGaN nucleation layer with high growth temperature can efficiently decrease the dislocation density and stress of the GaN film compared with AlN buffer layer. To increase the light extraction efficiency of GaN-based LEDs on SiC substrate, flip-chip structure and thin film flip-chip structure were designed and optimized. The fabricated blue LED had a maximum wall-plug efficiency of 72% at 80 mA. At 350 mA, the output power, the V_f, the dominant wavelength, and the wall-plug efficiency of the blue LED were 644 mW, 2.95 V, 460 nm, and 63%, respectively.

Keywords: SiC GaN AlGaN buffer light emitting diode flip chip light extraction efficiency

Received: 09 January 2015
Revised: 08 April 2015
Accepted manuscript online:

PACS:	73.61.Ey	(III-V semiconductors)
	85.60.Jb	(Light-emitting devices)

Fund:

Project supported by the National Basic Research Program of China (Grant No. 2011CB301904) and the National Natural Science Foundation of China (Grant Nos. 11134006 and 61327808).

Corresponding Authors: Hu Xiao-Bo
E-mail: xbhu@sdu.edu.cn

About author: 73.61.Ey; 85.60.Jb

Cite this article:

Xu Hua-Yong (徐化勇), Chen Xiu-Fang (陈秀芳), Peng Yan (彭燕), Xu Ming-Sheng (徐明升), Shen Yan (沈燕), Hu Xiao-Bo (胡小波), Xu Xian-Gang (徐现刚) Progress in research of GaN-based LEDs fabricated on SiC substrate 2015 Chin. Phys. B 24 067305

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Progress in research of GaN-based LEDs fabricated on SiC substrate

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