Design of patterned sapphire substrates for GaN-based light-emitting diodes

doi:10.1088/1674-1056/24/6/067103

Abstract

A new method for patterned sapphire substrate (PSS) design is developed and proven to be reliable and cost-effective. As progress is made with LEDs' luminous efficiency, the pattern units of PSS become more complicated, and the effect of complicated geometrical features is almost impossible to study systematically by experiments only. By employing our new method, the influence of pattern parameters can be systematically studied, and various novel patterns are designed and optimized within a reasonable time span, with great improvement in LEDs' light extraction efficiency (LEE). Clearly, PSS pattern design with such a method deserves particular attention. We foresee that GaN-based LEDs on these newly designed PSSs will achieve more progress in the coming years.

Keywords: light-emitting diode (LED) patterned sapphire substrate (PSS) pattern design computer simulation

Received: 13 February 2015
Revised: 28 March 2014
Accepted manuscript online:

PACS:	71.55.Eq	(III-V semiconductors)
	78.30.Fs	(III-V and II-VI semiconductors)

Fund:

Project supported by the National Natural Science Fundation for Excellent Young Scholars of China (Grant No. 51422203), the National Natural Science Foundation of China (Grant No. 51372001), the Outstanding Youth Foundation of Guangdong Scientific Committee (Grant No. S2013050013882), and the Strategic Special Funds for LEDs of Guangdong Province, China (Grant Nos. 2011A081301010, 2011A081301012, 2012A080302002, and 2012A080302004).

Corresponding Authors: Li Guo-Qiang
E-mail: msgli@scut.edu.cn

About author: 71.55.Eq; 78.30.Fs

Cite this article:

Wang Hai-Yan (王海燕), Lin Zhi-Ting (林志霆), Han Jing-Lei (韩晶磊), Zhong Li-Yi (钟立义), Li Guo-Qiang (李国强) Design of patterned sapphire substrates for GaN-based light-emitting diodes 2015 Chin. Phys. B 24 067103

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