Performance improvement of GaN-based light-emitting diodes transferred from Si (111) substrate onto electroplating Cu submount with embedded wide p-electrodes

doi:10.1088/1674-1056/24/3/038503

Abstract

Crack-free GaN/InGaN multiple quantum wells (MQWs) light-emitting diodes (LEDs) are transferred from Si substrate onto electroplating Cu submount with embedded wide p-electrodes. The vertical-conducting n-side-up configuration of the LED is achieved by using the through-hole structure. The widened embedded p-electrode covers almost the whole transparent conductive layer (TCL), which could not be applied in the conventional p-side-up LEDs due to the electrode-shading effect. Therefore, the widened p-electrode improves the current spreading property and the uniformity of luminescence. The working voltage and series resistance are thereby reduced. The light output of embedded wide p-electrode LEDs on Cu is enhanced by 147% at a driving current of 350 mA, in comparison to conventional LEDs on Si.

Keywords: light-emitting diodes embedded wide p-electrodes Si substrate electroplating Cu submount

Received: 30 July 2014
Revised: 20 October 2014
Accepted manuscript online:

PACS:	85.60.Jb	(Light-emitting devices)
	61.72.uj	(III-V and II-VI semiconductors)
	82.45.Qr	(Electrodeposition and electrodissolution)

Fund:

Project supported by the National Natural Science Foundation of China (Grant Nos. 61274039 and 51177175), the National Basic Research Program of China (Grant Nos. 2010CB923201 and 2011CB301903), the Ph.D. Program Foundation of Ministry of Education of China (Grant No. 20110171110021), and the Foundation of the Key Technologies R&D Program of Guangdong Province, China (Grant No. 2010A081002005).These authors contributed equally to this work.

Corresponding Authors: Zhang Bai-Jun
E-mail: zhbaij@mail.sysu.edu.cn

Cite this article:

Liu Ming-Gang (柳铭岗), Wang Yun-Qian (王云茜), Yang Yi-Bin (杨亿斌), Lin Xiu-Qi (林秀其), Xiang Peng (向鹏), Chen Wei-Jie (陈伟杰), Han Xiao-Biao (韩小标), Zang Wen-Jie (臧文杰), Liao Qiang (廖强), Lin Jia-Li (林佳利), Luo Hui (罗慧), Wu Zhi-Sheng (吴志盛), Liu Yang (刘扬), Zhang Bai-Jun (张佰君) Performance improvement of GaN-based light-emitting diodes transferred from Si (111) substrate onto electroplating Cu submount with embedded wide p-electrodes 2015 Chin. Phys. B 24 038503

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Performance improvement of GaN-based light-emitting diodes transferred from Si (111) substrate onto electroplating Cu submount with embedded wide p-electrodes

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