Indium-tin oxide films obtained by DC magnetron sputtering for improved Si heterojunction solar cell applications

doi:10.1088/1674-1056/24/11/117703

Abstract The indium-tin oxide (ITO) film as the antireflection layer and front electrodes is of key importance to obtaining high efficiency Si heterojunction (HJ) solar cells. To obtain high transmittance and low resistivity ITO films by direct-current (DC) magnetron sputtering, we studied the impacts of the ITO film deposition conditions, such as the oxygen flow rate, pressure, and sputter power, on the electrical and optical properties of the ITO films. ITO films of resistivity of 4×10^-4 Ω ·m and average transmittance of 89% in the wavelength range of 380-780 nm were obtained under the optimized conditions: oxygen flow rate of 0.1 sccm, pressure of 0.8 Pa, and sputtering power of 110 W. These ITO films were used to fabricate the single-side HJ solar cell without an intrinsic a-Si:H layer. However, the best HJ solar cell was fabricated with a lower sputtering power of 95 W, which had an efficiency of 11.47%, an open circuit voltage (V_oc) of 0.626 V, a filling factor (FF) of 0.50, and a short circuit current density (J_sc) of 36.4 mA/cm². The decrease in the performance of the solar cell fabricated with high sputtering power of 110 W is attributed to the ion bombardment to the emitter. The V_oc was improved to 0.673 V when a 5 nm thick intrinsic a-Si:H layer was inserted between the (p) a-Si:H and (n) c-Si layer. The higher V_oc of 0.673 V for the single-side HJ solar cell implies the excellent c-Si surface passivation by a-Si:H.

Keywords: ITO films Si heterojunction solar cell DC magnetron sputtering

Received: 28 November 2014
Revised: 18 May 2015
Accepted manuscript online:

PACS:	77.84.Bw	(Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.)
	81.15.Cd	(Deposition by sputtering)
	73.61.Jc	(Amorphous semiconductors; glasses)

Fund: Project supported by the National High Technology Research and Development Program of China (Grant No. 2011AA050501).

Corresponding Authors: Gu Jin-Hua
E-mail: gujinh@zzu.edu.cn

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Gu Jin-Hua (谷锦华), Si Jia-Le (司嘉乐), Wang Jiu-Xiu (王九秀), Feng Ya-Yang (冯亚阳), Gao Xiao-Yong (郜小勇), Lu Jing-Xiao (卢景霄) Indium-tin oxide films obtained by DC magnetron sputtering for improved Si heterojunction solar cell applications 2015 Chin. Phys. B 24 117703

[1]	Lien S Y;2010 Thin Solid Films 518 S10
[2]	Dao V A, Choi H, Heo J, Park H, Yoon K, Lee Y, Kim Y, Lakshminarayan N and Yi J;2010 Curr. Appl. Phys. 10 S506
[3]	Pla J, Tamasi M, Rizzoli R, Losurdo M, Centurioni E, Summonte C and Rubinelli F;2003 Thin Solid Films 425 185
[4]	Su C, Sheu T K, Chang Y T, Wang M A, Feng M C and Huang W C;2005 Synth. Met. 153 9
[5]	Liu J, Wu D and Zeng S;2009 J. Mater. Process. Technol. 209 3943
[6]	Maruyama T and Fukui K 1999 J. Appl. Phys. 70 3848
[7]	Craciun V, Craciun D, Wang X, Anderson T J and Singh R K 2004 Thin Solid Films 453-454 256
[8]	Tseng K S and Lo Y L;2013 Appl. Surf. Sci. 285 157
[9]	Hussain S Q, Oh W K, Ahn S, Le A H T, Kim S, Lee Y and Yi J;2014 Vacuum 101 18
[10]	Descoeudres A, Barraud L, Bartlome R, Choong G, Wolf S D, Zicarelli F and Ballif C;2010 Appl. Phys. Lett. 97 183505

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Indium-tin oxide films obtained by DC magnetron sputtering for improved Si heterojunction solar cell applications

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