Electron Raman scattering in semiconductor quantum well wire of cylindrical ring geometry

doi:10.1088/1674-1056/24/11/117302

Abstract We study the electron states and the differential cross section for an electron Raman scattering process in a semiconductor quantum well wire of cylindrical ring geometry. The electron Raman scattering developed here can be used to provide direct information about the electron band structures of these confinement systems. We assume that the system grows in a GaAs/Al_0.35Ga_0.65As matrix. The system is modeled by considering T = 0 K and also a single parabolic conduction band, which is split into a sub-band system due to the confinement. The emission spectra are discussed for different scattering configurations, and the selection rules for the processes are also studied. Singularities in the spectra are found and interpreted.

Keywords: electron states Raman scattering selection rules quantum well wires

Received: 11 March 2015
Revised: 11 June 2015
Accepted manuscript online:

PACS:	73.21.Hb	(Quantum wires)
	78.67.Lt	(Quantum wires)

Corresponding Authors: Re. Betancourt-Riera
E-mail: rbriera@gmail.com

Cite this article:

Re. Betancourt-Riera, Ri. Betancourt-Riera, J. M. Nieto Jalil, R. Riera Electron Raman scattering in semiconductor quantum well wire of cylindrical ring geometry 2015 Chin. Phys. B 24 117302

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Electron Raman scattering in semiconductor quantum well wire of cylindrical ring geometry

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