Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation

doi:10.1088/1674-1056/24/10/106106

Abstract Functional failure mode of commercial deep sub-micron static random access memory (SRAM) induced by total dose irradiation is experimentally analyzed and verified by circuit simulation. We extensively characterize the functional failure mode of the device by testing its electrical parameters and function with test patterns covering different functional failure modes. Experimental results reveal that the functional failure mode of the device is a temporary function interruption caused by peripheral circuits being sensitive to the standby current rising. By including radiation-induced threshold shift and off-state leakage current in memory cell transistors, we simulate the influence of radiation on the functionality of the memory cell. Simulation results reveal that the memory cell is tolerant to irradiation due to its high stability, which agrees with our experimental result.

Keywords: total dose irradiation static random access memory functional failure mode

Received: 03 March 2015
Revised: 07 May 2015
Accepted manuscript online:

PACS:	61.80.Ed	(γ-ray effects)
	61.82.Fk	(Semiconductors)
	85.30.Tv	(Field effect devices)
	07.85.-m	(X- and γ-ray instruments)

Corresponding Authors: Cui Jiang-Wei
E-mail: cuijw@ms.xjb.ac.cn

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Zheng Qi-Wen (郑齐文), Cui Jiang-Wei (崔江维), Zhou Hang (周航), Yu De-Zhao (余德昭), Yu Xue-Feng (余学峰), Lu Wu (陆妩), Guo Qi (郭旗), Ren Di-Yuan (任迪远) Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation 2015 Chin. Phys. B 24 106106

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Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation

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