Preparation of graphene on Cu foils by ion implantation with negative carbon clusters

doi:10.1088/1674-1056/24/1/018502

Abstract We report on few-layer graphene synthesized on Cu foils by ion implantation using negative carbon cluster ions, followed by annealing at 950 ℃ in vacuum. Raman spectroscopy reveals I_G/I_2D values varying from 1.55 to 2.38 depending on energy and dose of the cluster ions, indicating formation of multilayer graphene. The measurements show that the samples with more graphene layers have fewer defects. This is interpreted by graphene growth seeded by the first layers formed via outward diffusion of C from the Cu foil, though nonlinear damage and smoothing effects also play a role. Cluster ion implantation overcomes the solubility limit of carbon in Cu, providing a technique for multilayer graphene synthesis.

Keywords: ion implantation carbon clusters graphene copper foil

Received: 05 May 2014
Revised: 26 August 2014
Accepted manuscript online:

PACS:	85.40.Ry	(Impurity doping, diffusion and ion implantation technology)
	68.65.Pq	(Graphene films)
	78.30.-j	(Infrared and Raman spectra)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11105100, 11205116, and 11375135) and the State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, China (Grant No. AWJ-M13-03).

Corresponding Authors: Fu De-Jun
E-mail: djfu@whu.edu.cn

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Li Hui (李慧), Shang Yan-Xia (尚艳霞), Zhang Zao-Di (张早娣), Wang Ze-Song (王泽松), Zhang Rui (张瑞), Fu De-Jun (付德君) Preparation of graphene on Cu foils by ion implantation with negative carbon clusters 2015 Chin. Phys. B 24 018502

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Preparation of graphene on Cu foils by ion implantation with negative carbon clusters

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