Breakdown characteristics of AlGaN/GaN Schottky barrier diodes fabricated on a silicon substrate

doi:10.1088/1674-1056/23/9/097308

Abstract In this work, the breakdown characteristics of AlGaN/GaN planar Schottky barrier diodes (SBDs) fabricated on the silicon substrate are investigated. The breakdown voltage (BV) of the SBDs first increases as a function of the anode-to-cathode distance and then tends to saturate at larger inter-electrode spacing. The saturation behavior of the BV is likely caused by the vertical breakdown through the intrinsic GaN buffer layer on silicon, which is supported by the post-breakdown primary leakage path analysis with the emission microscopy. Surface passivation and field plate termination are found effective to suppress the leakage current and enhance the BV of the SBDs. A high BV of 601 V is obtained with a low on-resistance of 3.15 mΩ·cm².

Keywords: AlGaN/GaN Schottky barrier diodes silicon substrate breakdown

Received: 20 January 2014
Revised: 26 March 2014
Accepted manuscript online:

PACS:	73.61.Ey	(III-V semiconductors)
	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	85.30.Kk	(Junction diodes)

Fund: Project supported by the National Basic Research Program of China (Grant Nos. 2010CB327504, 2011CB922100, and 2011CB301900), the National Natural Science Foundation of China (Grant Nos. 60936004 and 11104130), the Natural Science Foundation of Jiangsu Province, China (Grant Nos. BK2011556 and BK2011050), and the Priority Academic Development Program of Jiangsu Higher Education Institutions, China.

Corresponding Authors: Lu Hai
E-mail: hailu@nju.edu.cn

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Jiang Chao (蒋超), Lu Hai (陆海), Chen Dun-Jun (陈敦军), Ren Fang-Fang (任芳芳), Zhang Rong (张荣), Zheng You-Dou (郑有炓) Breakdown characteristics of AlGaN/GaN Schottky barrier diodes fabricated on a silicon substrate 2014 Chin. Phys. B 23 097308

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Breakdown characteristics of AlGaN/GaN Schottky barrier diodes fabricated on a silicon substrate

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