Nucleation of GaSb on GaAs (001) by low pressure metal-organic chemical vapor deposition

doi:10.1088/1674-1056/23/8/088110

Abstract The initial growth stage of GaSb on GaAs (001) by low pressure metal-organic chemical vapor deposition (MOCVD) is investigated. The dependence of the nucleation on growth temperature, growth pressure, and vapor V/Ⅲ ratio is studied by means of atomic force microscopy. The nucleation characteristics include the island density, size, and size uniformity distribution. The nucleation mechanism is discussed by the effects of growth temperature, growth pressure, and vapor V/Ⅲ ratio on the density, size, and size uniformity of GaSb islands. With the growth temperature increasing from 500 ℃ to 610 ℃ and the growth pressure increasing from 50 mbar to 1000 mbar (1 mbar = 10⁵ Pa), the island density first increases and then decreases; with the V/Ⅲ ratio increasing from 0.5 to 3, the trend is contrary.

Keywords: MOCVD GaSb nucleation

Received: 19 January 2014
Revised: 04 April 2014
Accepted manuscript online:

PACS:	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	81.15.Kk	(Vapor phase epitaxy; growth from vapor phase)
	81.05.Ea	(III-V semiconductors)
	81.10.Aj	(Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61076010) and the State Key Laboratory Program on Integrated Optoelectronics, China (Grant No. IOSKL2012ZZ13).

Corresponding Authors: Zhang Yuan-Tao, Zhang Bao-Lin
E-mail: zhangyt@jlu.edu.cn;zbl@jlu.edu.cn

Cite this article:

Wang Lian-Kai (王连锴), Liu Ren-Jun (刘仁俊), Yang Hao-Yu (杨皓宇), Lü You (吕游), Li Guo-Xing (李国兴), Zhang Yuan-Tao (张源涛), Zhang Bao-Lin (张宝林) Nucleation of GaSb on GaAs (001) by low pressure metal-organic chemical vapor deposition 2014 Chin. Phys. B 23 088110

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Nucleation of GaSb on GaAs (001) by low pressure metal-organic chemical vapor deposition

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