Bipolar resistance switching in the fully transparent BaSnO3-based memory device

doi:10.1088/1674-1056/23/8/087304

Abstract The fully transparent indium-tin-oxide/BaSnO₃/F-doped SnO₂ devices that show a stable bipolar resistance switching effect are successfully fabricated. In addition to the transmittance being above 87% for visible light, an initial forming process is unnecessary for the production of transparent memory. Fittings to the current-voltage curves reveal the interfacial conduction in the devices. The first-principles calculation indicates that the oxygen vacancies in cubic BaSnO₃ will form the defective energy level below the bottom of conduction band. The field-induced resistance change can be explained based on the change of the interfacial Schottky barrier, due to the migration of oxygen vacancies in the vicinity of the interface. This work presents a candidate material BaSnO₃ for the application of resistive random access memory to transparent electronics.

Keywords: transparent resistive random access memory resistance switching oxygen vacancy BaSnO₃

Received: 19 October 2013
Revised: 30 January 2014
Accepted manuscript online:

PACS:	73.40.-c	(Electronic transport in interface structures)
	73.40.Rw	(Metal-insulator-metal structures)
	73.50.Fq	(High-field and nonlinear effects)
	72.20.-i	(Conductivity phenomena in semiconductors and insulators)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11174135 and 60976016), the National 973 Project, China (Gant No. 0213117005), the State Key Program for Basic Research of China (Grant No. 2010CB630704), the Science Foundation of Henan Province, China (Grant No. 14A430020), the Science Foundation of Henan University, China (Grant No. SBGJ090503), and China Postdoctoral Science Foundation (Grant No. 2012M511250).

Corresponding Authors: Yin Jiang
E-mail: jyin@nju.edu.cn

Cite this article:

Zhang Ting (张婷), Yin Jiang (殷江), Zhao Gao-Feng (赵高峰), Zhang Wei-Feng (张伟风), Xia Yi-Dong (夏奕东), Liu Zhi-Guo (刘治国) Bipolar resistance switching in the fully transparent BaSnO₃-based memory device 2014 Chin. Phys. B 23 087304

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Bipolar resistance switching in the fully transparent BaSnO3-based memory device

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Bipolar resistance switching in the fully transparent BaSnO₃-based memory device