Experimental verification of the parasitic bipolar amplification effect in PMOS single event transients

doi:10.1088/1674-1056/23/7/079401

Abstract The contribution of parasitic bipolar amplification to SETs is experimentally verified using two P-hit target chains in the normal layout and in the special layout. For PMOSs in the normal layout, the single-event charge collection is composed of diffusion, drift, and the parasitic bipolar effect, while for PMOSs in the special layout, the parasitic bipolar junction transistor cannot turn on. Heavy ion experimental results show that PMOSs without parasitic bipolar amplification have a 21.4% decrease in the average SET pulse width and roughly a 40.2% reduction in the SET cross-section.

Keywords: single event effect single event transient parasitic bipolar amplification heavy ion experiments

Received: 26 November 2013
Revised: 10 January 2014
Accepted manuscript online:

PACS:	94.05.Dd	(Radiation processes)
	94.05.Rx	(Experimental techniques and laboratory studies)
	85.30.Tv	(Field effect devices)
	02.60.Cb	(Numerical simulation; solution of equations)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61376109).

Corresponding Authors: Chen Shu-Ming
E-mail: smchen_cs@163.com

About author: 94.05.Dd; 94.05.Rx; 85.30.Tv; 02.60.Cb

Cite this article:

He Yi-Bai (何益百), Chen Shu-Ming (陈书明) Experimental verification of the parasitic bipolar amplification effect in PMOS single event transients 2014 Chin. Phys. B 23 079401

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Experimental verification of the parasitic bipolar amplification effect in PMOS single event transients

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