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Chin. Phys. B, 2014, Vol. 23(6): 067104    DOI: 10.1088/1674-1056/23/6/067104
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Ferromagnetic-insulators-modulated transport properties on the surface of a topological insulator

Guo Jun-Ji (郭俊吉), Liao Wen-Hu (廖文虎)
College of Physics, Mechanical and Electrical Engineering, Jishou University, Jishou 416000, China
Abstract  Transport properties on the surface of a topological insulator (TI) under the modulation of a two-dimensional (2D) ferromagnet/ferromagnet junction are investigated by the method of wave function matching. The single ferromagnetic barrier modulated transmission probability is expected to be a periodic function of the polarization angle and the planar rotation angle, that decreases with the strength of the magnetic proximity exchange increasing. However, the transmission probability for the double ferromagnetic insulators modulated n-n junction and n-p junction is not a periodic function of polarization angle nor planar rotation angle, owing to the combined effects of the double ferromagnetic insulators and the barrier potential. Since the energy gap between the conduction band and the valence band is narrowed and widened respectively in ranges of 0≤θ<π/2 and π/2<θπ, the transmission probability of the n-n junction first increases rapidly and then decreases slowly with the increase of the magnetic proximity exchange strength. While the transmission probability for the n-p junction demonstrates an opposite trend on the strength of the magnetic proximity exchange because the band gaps contrarily vary. The obtained results may lead to the possible realization of a magnetic/electric switch based on TIs and be useful in further understanding the surface states of TIs.
Keywords:  transport properties      surface state Dirac electron      topological insulator      ferromagnetic insulators  
Received:  11 September 2013      Revised:  24 January 2014      Accepted manuscript online: 
PACS:  71.10.Pm (Fermions in reduced dimensions (anyons, composite fermions, Luttinger liquid, etc.))  
  72.25.Dc (Spin polarized transport in semiconductors)  
  73.20.-r (Electron states at surfaces and interfaces)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11264013 and 11147021), the Hunan Provincial Natural Science Foundation of China (Grant No. 12JJ4003), and the Research Program for Employee of Jishou University, China (Grant No. jsdxkyzz201005).
Corresponding Authors:  Liao Wen-Hu     E-mail:  whliao2007@aliyun.com

Cite this article: 

Guo Jun-Ji (郭俊吉), Liao Wen-Hu (廖文虎) Ferromagnetic-insulators-modulated transport properties on the surface of a topological insulator 2014 Chin. Phys. B 23 067104

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