Partial-SOI high voltage laterally double-diffused MOS with a partially buried n+-layer

doi:10.1088/1674-1056/23/6/067101

Abstract A novel partial silicon-on-insulator laterally double-diffused metal-oxide-semiconductor transistor (PSOI LDMOS) with a thin buried oxide layer is proposed in this paper. The key structure feature of the device is an n⁺-layer, which is partially buried on the bottom interface of the top silicon layer (PBNL PSOI LDMOS). The undepleted interface n⁺-layer leads to plenty of positive charges accumulated on the interface, which will modulate the distributions of the lateral and vertical electric fields for the device, resulting in a high breakdown voltage (BV). With the same thickness values of the top silicon layer (10 μm) and buried oxide layer (0.375 μm), the BV of the PBNL PSOI LDMOS increases to 432 V from 285 V of the conventional PSOI LDMOS, which is improved by 51.6%.

Keywords: silicon-on-insulator breakdown voltage interface charges electric field

Received: 12 October 2013
Revised: 11 December 2013
Accepted manuscript online:

PACS:	71.10.-w	(Theories and models of many-electron systems)
	73.20.-r	(Electron states at surfaces and interfaces)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	73.40.Ty	(Semiconductor-insulator-semiconductor structures)

Fund: Project supported by the Natural Science Foundation of Chongqing Science and Technology Commission (CQ CSTC) (Grant No. cstcjjA40008), the Fundamental Research Funds for the Central Universities, China (Grant No. CDJZR12160003), the China Postdoctoral Science Foundation (Grant Nos. 2012M511906 and 2013T60835), and Chongqing University Postgraduates' Science and Innovation Fund, China (Grant No. CDJXS12161105).

Corresponding Authors: Hu Sheng-Dong
E-mail: hushengdong@hotmail.com

Cite this article:

Hu Sheng-Dong (胡盛东), Wu Xing-He (武星河), Zhu Zhi (朱志), Jin Jing-Jing (金晶晶), Chen Yin-Hui (陈银晖) Partial-SOI high voltage laterally double-diffused MOS with a partially buried n⁺-layer 2014 Chin. Phys. B 23 067101

[1]	Cristoloveanu S 2002 J. High Speed Electron. Syst. 12 137
[2]	Hu S D, Zhang B and Li Z J 2009 Chin. Phys. B 18 315
[3]	Hu S D, Luo X R, Zhang B and Li Z J 2010 Electron. Lett. 46 82
[4]	Luo X R, Li Z J, Zhang B, Fu D P, Zhan Z, Chen K F, Hu S D, Zhang Z Y, Feng Z C and Yan B 2008 IEEE Electron Dev. Lett. 29 1395
[5]	Zhang B, Li Z J, Hu S D and Luo X R 2009 IEEE Trans. Electron Dev. 56 2327
[6]	Wang Y G, Luo X R, Ge R, Wu L J, Chen X, Yao G L, Lei T F, Wang Q, Fan J I and Hu X R 2011 Chin. Phys. B 20 077304
[7]	Luo X R, Zhang B and Li Z J 2007 Solid State Electron. 51 493
[8]	Zhang W T, Wu L J, Qiao M, Luo X R, Zhang B and Li Z J 2012 Chin. Phys. B 21 077101
[9]	Luo X R, Wang Y G, Deng H and Udrea F 2010 Chin. Phys. B 19 077306
[10]	Hu S D, Zhang L, Luo J, Tan K Z, Chen W S, Gan P, Zhou X C and Zhu Z 2013 Electron. Lett. 49 223
[11]	Park J M, Grasser T, Kosina H and Selberherr S 2003 Solid-State Electron. 47 275
[12]	Hu S D, Wu L J, Zhou J L, Gan P, Zhang B and Li Z J 2012 Chin. Phys. B 21 027101
[13]	Udrea F, Popescu A and Milne W 1997 IEEE International SOI Conference, October 6-9, 1997, California, USA, p. 102
[14]	Ramakrishna T, Shyam H and Narayanan E M S 2004 Solid-State Electron. 48 1655
[15]	Luo X R, Zhang B and Li Z J 2008 IEEE Trans. Electron Dev. 55 1756
[16]	Orouji A A, Samaneh S and Morteza F 2009 IEEE Trans. Dev. Mater. Reliab. 9 449
[17]	Orouji A A, Hamid A M and Dideban A 2010 Physica E 43 498
[18]	Hossein E and Orouji A A 2010 IEEE Trans. Electron Dev. 57 1959
[19]	Luo X R, Wang Y G, Deng H, Fan J, Lei T F and Liu Y 2010 IEEE Trans. Electron Dev. 57 535
[20]	Luo X R, UdreaF, Wang Y G, Yao G L and Liu Y 2010 IEEE Electron Dev. Lett. 31 594
[21]	Mehdi S, Behzad E, Ali A K and Saeed M 2011 Microelectron. Reliab. 51 2069
[22]	Hu S D, Luo J, Tan K Z, Zhang L, Li Z J, Zhang B, Zhou J L, Gan P, Qin G L and Zhang Z Y 2012 Microelectron. Reliab. 52 692
[23]	Hu Y, Huang Q J, Wang G F, Chang S and Wang H 2012 IEEE Trans. Electron Dev. 59 1131
[24]	Mahsa M and Orouji A A 2013 Superlattices and Microstructures 57 77

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Partial-SOI high voltage laterally double-diffused MOS with a partially buried n+-layer

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Partial-SOI high voltage laterally double-diffused MOS with a partially buried n⁺-layer