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Chin. Phys. B, 2014, Vol. 23(6): 066803    DOI: 10.1088/1674-1056/23/6/066803

Effects of annealing temperature on the electrical property and microstructure of aluminum contact on n-type 3C-SiC

Dai Chong-Chonga b, Liu Xue-Chaoa, Zhou Tian-Yua b, Zhuo Shi-Yia, Shi Biaoc, Shi Er-Weia
a Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China;
b University of the Chinese Academy of Sciences, Beijing 100049, China;
c Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 401122, China
Abstract  The 3C-SiC thin films used herein are grown on Si substrates by chemical vapor deposition. Al contacts with different thickness values are deposited on the 3C-SiC/Si (100) structure by the magnetron sputtering method and are annealed at different temperatures. We focus on the effects of the annealing temperature on the ohmic contact properties and microstructure of Al/3C-SiC structure. The electrical properties of Al contacts to n-type 3C-SiC are characterized by the transmission line method. The crystal structures and chemical phases of Al contacts are examined by X-ray diffraction, Raman spectra, and transmission electron microscopy, respectively. It is found that the Al contacts exhibit ohmic contact behaviors when the annealing temperature is below 550 ℃, and they become Schottky contacts when the annealing temperature is above 650 ℃. A minimum specific contact resistance of 1.8 ×10-4 Ω·cm2 is obtained when the Al contact is annealed at 250 ℃.
Keywords:  Al/3C-SiC      ohmic contact      specific contact resistance  
Received:  01 November 2013      Revised:  01 December 2013      Published:  15 June 2014
PACS:  68.47.Fg (Semiconductor surfaces)  
  73.40.Ns (Metal-nonmetal contacts)  
Fund: Project supported by the Shanghai Rising-Star Program, China (Grant No. 13QA1403800), the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 51002176), the Innovation Program of the Chinese Academy of Sciences (Grant No. KJCX2-EW-W10), the Industry-Academic Joint Technological Innovations Fund Project of Jiangsu Province, China (Grant No. BY2011119), and the National High Technology Research and Development Program of China (Grant Nos. 2013AA031603 and 2014AA032602).
Corresponding Authors:  Liu Xue-Chao     E-mail:

Cite this article: 

Dai Chong-Chong, Liu Xue-Chao, Zhou Tian-Yu, Zhuo Shi-Yi, Shi Biao, Shi Er-Wei Effects of annealing temperature on the electrical property and microstructure of aluminum contact on n-type 3C-SiC 2014 Chin. Phys. B 23 066803

[1] Porter L M and Davis R F 1995 Mater. Sci. Eng. B: Solid 34 83
[2] Morkoc H, Strite S, Gao G B, Lin M E, Sverdlov B and Burns M 1994 J. Appl. Phys. 76 1363
[3] Casady J B and Johnson R W 1996 Solid-State Electron. 39 1409
[4] Zhang L, Zhang Y M, Zhang Y M, Han C and Ma Y J 2009 Chin. Phys. B 18 3490
[5] Wan J W, Capano M A and Melloch M R 2002 Solid-State Electron. 46 1227
[6] Chang S H, Liu X C, Huang W, Xiong Z, Yang J H and Shi E W 2012 Chin. Phys. B 21 096801
[7] Crofton J, Porter L M and Williams J R 1997 Phys. Status Solidi B 202 581
[8] Huang W, Chen Z Z, Chen Y, Shi E W, Zhang J Y, Liu Q F and Liu Q 2010 Acta Phys. Sin. 59 3466 (in Chinese)
[9] Konishi R, Yasukochi R, Nakatsuka O, Koide Y, Moriyama M and Murakami M 2003 Mater. Sci. Eng. B: Solid 98 286
[10] Zhuang H, Zhang L, Staedler T and Jiang X 2013 Chem. Vapor Depos. 19 29
[11] Berckmans S, Auvray L, Ferro G, Cauwet F, Souliere V, Collard E and Brylinski C 2012 J. Cryst. Growth 354 119
[12] Janzen E, Kordina O, Henry A, Chen W M, Son N T, Monemar B, Sorman E, Bergman P, Harris C I, Yakimova R, Tuominen M, Konstantinov A O, Hallin C and Hemmingson C 1994 Phys. Scr. 54 283
[13] Yan C F, Shi E W, Chen Z Z, Li X B and Xiao B 2008 J. Inorg. Mater. 23 425
[14] Wright N G, Horsfall A B and Vassilevski K 2008 Mater. Today 11 16
[15] Bazin A E, Chassagne T, Michaud J F, Leycuras A, Portail M, Zielinski M, Ollard E and Alquier D 2007 Proceeding of the 6th European Conference on Silicon Carbide and Related Materials, September, 2006, Newcastle Upon Tyne, England, p. 721
[16] Roy S, Jacob C and Basu S 2003 Solid-State Electron. 47 2035
[17] Moki A, Shenoy P, Alok D, Baliga B J, Wongchotigul K and Spencer M G 1995 J. Electron. Mater. 24 315
[18] Fanaei T, Camjre N, Aktik C, Gujrathi S, Lessard A, Awad Y, Oulachgar E and Scarlete M 2008 Thin Solid Films 516 3755
[19] Shi B, Liu X C, Zhu M X, Yang J H and Shi E W 2012 Appl. Surf. Sci. 259 685
[20] Ohmi T 1996 J. Electrochem. Soc. 143 2957
[21] Ohmi T, Miyashita M, Itano M, Imaoka T and Kawanabe I 1992 IEEE Trans. Electron Dev. 39 537
[22] Lu W J, Mitchel W C, Landis G R, Crenshaw T R and Collins W E 2003 Solid-State Electron. 47 2001
[23] Schroder D K 2006 Semiconductor Material and Device Characterization, 3rd edn. (New Jersey: John Wiley & Sons, Inc.) p. 147
[24] Hsieh W T, Fang Y K, Wu K H, Lee W J and Ho C W 2001 IEEE Trans. Electron Dev. 48 801
[25] Rahimi R, Miller C M, Raghavan S, Stinespring C D and Korakakis D 2009 J. Phys. D: Appl. Phys. 42 055108
[26] Jacob C, Pirouz P, Kuo H I and Mehregany M 1998 Solid-State Electron. 42 2329
[27] Noh J I, Nahm K S, Kim K C and Capano M A 2002 Solid-State Electron. 46 2273
[28] Sun G S, Liu X F, Wang L, Zhao W S, Yang T, Wu H L, Yan G G, Zhao Y M, Ning J, Zeng Y P and Li J M 2010 Chin. Phys. B 19 088101
[29] Rogowski J and Kubiak A 2013 Surf. Interface Anal. 45 381
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