Model of hot-carrier induced degradation in ultra-deep sub-micrometer nMOSFET

doi:10.1088/1674-1056/23/5/057305

Abstract The degradation produced by hot carrier (HC) in ultra-deep sub-micron n-channel metal oxide semiconductor field effect transistor (nMOSFET) has been analyzed in this paper. The generation of negatively charged interface states is the predominant mechanism for the ultra-deep sub-micron nMOSFET. According to our lifetime model of p-channel MOFET (pMOFET) that was reported in a previous publication, a lifetime prediction model for nMOSFET is presented and the parameters in the model are extracted. For the first time, the lifetime models of nMOFET and pMOSFET are unified. In addition, the model can precisely predict the lifetime of the ultra-deep sub-micron nMOSFET and pMOSFET.

Keywords: n-channel metal oxide semiconductor field effect transistor hot carrier degradation lifetime model

Received: 25 October 2013
Revised: 22 November 2013
Accepted manuscript online:

PACS:	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	85.30.Tv	(Field effect devices)

Fund: Project supported by the National Basic Research Program of China (Grant No. 2011CBA00606) and the National Natural Science Foundation of China (Grant No. 61106106).

Corresponding Authors: Lei Xiao-Yi
E-mail: lydialeixy@163.com

About author: 73.40.Qv; 85.30.Tv

Cite this article:

Lei Xiao-Yi (雷晓艺), Liu Hong-Xia (刘红侠), Zhang Yue (张月), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) Model of hot-carrier induced degradation in ultra-deep sub-micrometer nMOSFET 2014 Chin. Phys. B 23 057305

[1]	Bravaix A, Guerin C, Huard V, Roy D, Roux J M and Vincent E 2009 Proceedings of the 48th International Reliability Physics Symposium, April 26-30, 2009 Montreal, Canada, p. 531
[2]	Hu C, Tam S C, Hsu F C, Ko P K, Chan T Y and Terrill K W 1985 IEEE Trans. Electron. Dev. 32 375
[3]	Liu H X, Hao Y, Hawkins I D and Peaker A R 2005 Chin. Phys. 14 1644
[4]	Ma X H, Cao Y R, Hao Y and Zhang Y 2011 Chin. Phys. B 20 037305
[5]	Hoff J R, Arora R, Cressler J D, Deptuch G W, Gui P, Lourenco N E, Wu G and Yarema R J 2012 IEEE Nuclear Sicience 59 1757
[6]	Ma X H, Wang J P, Cao Y R and Chen H F 2006 Chin. Phys. 15 2742
[7]	Ong T C, Ko P K and Hu C 1990 IEEE Trans. Electron. Dev. 37 1658
[8]	Lei X Y, Liu H X, Zhang K, Zhang Y, Zheng X F, Ma X H and Hao Y 2013 Chin. Phys. B 22 047304
[9]	Amat E, Kauerauf T, Degraeve R, Keersgieter A D, Rodriguez R, Nafria M, Aymerich X and Groeseneken G 2009 IEEE Trans. Dev. Mater. Rel. 9 425
[10]	Amat E, Kauerauf T, Degraeve R, Rodríguez R, Nafría M, Aymerich X and Groeseneken G 2011 IEEE Trans. Dev. Mater. Rel. 11 92
[11]	Woltjer R, Paulzen G M, Pomp H G, Lifka H and Woerlee P H 1995 IEEE Trans. Electron. Dev. 42 109

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Model of hot-carrier induced degradation in ultra-deep sub-micrometer nMOSFET

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