Improvement in a-plane GaN crystalline quality using wet etching method

doi:10.1088/1674-1056/23/4/047804

Abstract Nonpolar (112 0) GaN films are grown on the etched a-plane GaN substrates via metalorganic vapor phase epitaxy. High-resolution X-ray diffraction analysis shows great decreases in the full width at half maximum of the samples grown on etched substrates compared with those of the sample without etching, both on-axis and off-axis, indicating the reduced dislocation densities and improved crystalline quality of these samples. The spatial mapping of the E₂ (high) phonon mode demonstrates the smaller line width with a black background in the wing region, which testifies the reduced dislocation densities and enhanced crystalline quality of the epitaxial lateral overgrowth areas. Raman scattering spectra of the E₂ (high) peaks exhibit in-plane compressive stress for all the overgrowth samples, and the E₂ (high) peaks of samples grown on etched substrates shift toward the lower frequency range, indicating the relaxations of in-plane stress in these GaN films. Furthermore, room temperature photoluminescence measurement demonstrates a significant decrease in the yellow-band emission intensity of a-plane GaN grown on etched templates, which also illustrates the better optical properties of these samples.

Keywords: nonpolar GaN wet etching metal-organic chemical vapor deposition crystalline quality

Received: 04 May 2013
Revised: 22 August 2013
Accepted manuscript online:

PACS:	78.55.Cr	(III-V semiconductors)
	81.15.Kk	(Vapor phase epitaxy; growth from vapor phase)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61204006), the Fundamental Research Funds for the Central Universities, China (Grant No. K50511250002), and the National Key Science & Technology SpecialProject, China (Grant No. 2008ZX01002-002).

Corresponding Authors: Zhang Jin-Cheng
E-mail: jchzhang@xidian.edu.cn

About author: 78.55.Cr; 81.15.Kk

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Cao Rong-Tao (曹荣涛), Xu Sheng-Rui (许晟瑞), Zhang Jin-Cheng (张进成), Zhao Yi (赵一), Xue Jun-Shuai (薛军帅), Ha Wei (哈微), Zhang Shuai (张帅), Cui Pei-Shui (崔培水), Wen Hui-Juan (温慧娟), Chen Xing (陈兴) Improvement in a-plane GaN crystalline quality using wet etching method 2014 Chin. Phys. B 23 047804

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