A two-dimensional analytical subthreshold behavior model for junctionless dual-material cylindrical surrounding-gate MOSFETs

doi:10.1088/1674-1056/23/3/038502

Abstract A two-dimensional analytical subthreshold behavior model for junctionless dual-material cylindrical surrounding-gate (JLDMCSG) metal-oxide-semiconductor field-effect transistors (MOSFETs) is proposed. It is derived by solving the two-dimensional Poisson’s equation in two continuous cylindrical regions with any simplifying assumption. Using this analytical model, the subthreshold characteristics of JLDMCSG MOSFETs are investigated in terms of channel electrostatic potential, horizontal electric field, and subthreshold current. Compared to junctionless single-material cylindrical surrounding-gate MOSFETs, JLDMCSG MOSFETs can effectively suppress short-channel effects and simultaneously improve carrier transport efficiency. It is found that the subthreshold current of JLDMCSG MOSFETs can be significantly reduced by adopting both a thin oxide and thin silicon channel. The accuracy of the analytical model is verified by its good agreement with the three-dimensional numerical simulator ISE TCAD.

Keywords: surrounding-gate MOSFET dual-material gate junctionless transistor analytical model

Received: 12 August 2013
Revised: 05 September 2013
Accepted manuscript online:

PACS:	85.30.De	(Semiconductor-device characterization, design, and modeling)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	02.60.Cb	(Numerical simulation; solution of equations)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61204092 and 61076101) and the Fundamental Research Funds for the Central Universities of Ministry of Education of China (Grant No. K50511250001).

Corresponding Authors: Li Cong
E-mail: cong.li@mail.xidian.edu.cn

Cite this article:

Li Cong (李聪), Zhuang Yi-Qi (庄奕琪), Zhang Li (张丽), Jin Gang (靳刚) A two-dimensional analytical subthreshold behavior model for junctionless dual-material cylindrical surrounding-gate MOSFETs 2014 Chin. Phys. B 23 038502

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A two-dimensional analytical subthreshold behavior model for junctionless dual-material cylindrical surrounding-gate MOSFETs

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