Please wait a minute...
Chin. Phys. B, 2014, Vol. 23(3): 030701    DOI: 10.1088/1674-1056/23/3/030701
GENERAL Prev   Next  

Optical properties of aluminum-doped zinc oxide films deposited by direct-current pulse magnetron reactive sputtering

Gao Xiao-Yong (郜小勇), Chen Chao (陈超), Zhang Sa (张飒)
School of Physics and Engineering, Zhengzhou University, Zhengzhou 450052, China
Abstract  A series of <103>-oriented aluminum-doped zinc oxide (AZO) films were deposited on glass substrates via direct-current pulse magnetron reactive sputtering at different O2-to-Ar gas flow ratios (GFRs). The optical properties of the films were characterized using the fitted optical constants in the general oscillator model (which contains two Psemi-Tri oscillators) through the use of measured ellipsometric parameters. The refractive index dispersion data below the interband absorption edge were analyzed using a single-oscillator model. The fitted optical energy gap obtained using the single-oscillator model clearly shows a blue shift, followed by a red shift, as the GFR increases from 0.9/18 to 2.1/18. This shift can be attributed to the change in the free electron concentration of the film, which is closely related to the film stress. In addition, the fitted β value indicates that the AZO film falls under the ionic class. The photoluminescence spectrum indicates a photoluminescence mechanism of the direct and wide energy gap semiconductor.
Keywords:  AZO film      spectroscopic ellipsometry      single-oscillator model  
Received:  07 June 2013      Revised:  04 September 2013      Accepted manuscript online: 
PACS:  07.60.Fs (Polarimeters and ellipsometers)  
  78.20.-e (Optical properties of bulk materials and thin films)  
  77.55.hf (ZnO)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60807001), the Foundation of Young Key Teachers from University of Henan Province, China (Grant No. 2011GGJS-008), the Foundation of Graduate Education Support of Zhengzhou University, China, and the Foundation of Graduate Innovation of Zhengzhou University, China (Grant No. 12L00104).
Corresponding Authors:  Gao Xiao-Yong     E-mail:  xygao@zzu.edu.cn

Cite this article: 

Gao Xiao-Yong (郜小勇), Chen Chao (陈超), Zhang Sa (张飒) Optical properties of aluminum-doped zinc oxide films deposited by direct-current pulse magnetron reactive sputtering 2014 Chin. Phys. B 23 030701

[1] Minemoto T, Negami T, Nishiwaki S, Takakura H and Hamakawa Y 2000 Thin Solid Films 372 173
[2] Song D, Aberle A G and Xia J 2002 Appl. Surf. Sci. 195 291
[3] Vanheusden K, Warren W L and Seager C H 1996 J. Appl. Phys. 79 7983
[4] Chopra K L, Major S and Pandya D K 1983 Thin Solid Films 102 1
[5] Granqvist C G 1990 Thin Solid Films 193–194 730
[6] Kluth O, Schöpe G, Hüpkes J, Agashe C, Müller J and Rech B 2003 Thin Solid Films 442 80
[7] Zhang D H and Brode D E 1995 Acta Phys. Sin. 44 1321 (in Chinese)
[8] Kim K H, Park K C and Ma D Y 1997 J. Appl. Phys. 81 7764
[9] Agura H, Suzuki A, Matsushita T, Aoki T and Okuda M 2003 Thin Solid Films 445 263
[10] Gao X Y, Lin Q G, Feng H L, Liu Y F and Lu J X 2009 Thin Solid Films 517 4684
[11] Woollam J A Co. Inc. 2011 Complete EASE Software Manual p. 338
[12] Chen C, Ji Y, Gao X Y, Zhao M K, Ma J M, Zhang Z Y and Lu J X 2012 Acta Phys. Sin. 61 036104 (in Chinese)
[13] Chen X C, Zhou J P, Wang H Y, Xu P S and Pan G Q 2011 Chin. Phys. B 20 096102
[14] Segmuller A and Murakami M 1988 Analytical Techniques for Thin Films, eds. by Tu K N and Rosenberg R (Boston: Academic Press) pp. 143–200
[15] Cebulla R, Wendt R and Ellmer K 1997 J. Appl. Phys. 83 1087
[16] Ma J M, Liang Y, Gao X Y, Chen C, Zhao M K and Lu J X 2012 Acta Phys. Sin. 61 056106 (in Chinese)
[17] Wemple S H and DiDomenico M J 1971 Phys. Rev. B 3 1338
[18] Goldsmith S, ÇetinörgüE and Boxman R L 2009 Thin Solid Films 517 5146
[19] Hopfield J J 1970 Phys. Rev. B 2 973
[20] You Z Z and Hua G J 2009 Vacuum 83 984
[21] Roth A P, Webb J B and Williams D F 1981 Solid State Commun. 39 1269
[22] Burstein E 1954 Phys. Rev. 93 632
[23] Tan I H, Lishan D, Mirin R, Jayaraman V, Yasuda T, Hu E L and Bowers J 1991 Appl. Phys. Lett. 59 1875
[1] Gradient refractive structured NiCr thin film absorber for pyroelectric infrared detectors
Yunlu Lian(练芸路), He Yu(于贺), Zhiqing Liang(梁志清), Xiang Dong(董翔). Chin. Phys. B, 2019, 28(6): 067801.
[2] Study on electrical defects level in single layer two-dimensional Ta2O5
Dahai Li(李大海), Xiongfei Song(宋雄飞), Linfeng Hu(胡林峰), Ziyi Wang(王子仪), Rongjun Zhang(张荣君), Liangyao Chen(陈良尧), David Wei Zhang(张卫), Peng Zhou(周鹏). Chin. Phys. B, 2016, 25(4): 047304.
[3] Optical study of Ba(MnxTi(1-x)O3) thin films by spectroscopic ellipsometry
Zhang Ting (张婷), Yin Jiang (殷江), Ding Ling-Hong (丁玲红), Zhang Wei-Feng (张伟风). Chin. Phys. B, 2013, 22(11): 117801.
[4] Tunable structural color of anodic tantalum oxide films
Sheng Cui-Cui (盛翠翠), Cai Yun-Yu (蔡云雨), Dai En-Mei (代恩梅), Liang Chang-Hao (梁长浩 ). Chin. Phys. B, 2012, 21(8): 088101.
[5] Mixed polarization in determining the film thickness of a silicon sphere by spectroscopic ellipsometry
Zhang Ji-Tao(张继涛), Wu Xue-Jian(吴学健), and Li Yan(李岩) . Chin. Phys. B, 2012, 21(1): 010701.
[6] Spectroscopic ellipsometric study of the optical properties of Ag2O film prepared by direct-current magnetron reactive sputtering
Gao Xiao-Yong(郜小勇), Feng Hong-Liang(冯红亮), Ma Jiao-Min(马姣民), and Zhang Zeng-Yuan(张增院). Chin. Phys. B, 2010, 19(9): 090701.
[7] Deposition pressure effect on the surface roughness scaling of microcrystalline silicon films
Zhu Zhi-Li(朱志立), Ding Yan-Li(丁艳丽), Wang Zhi-Yong(王志永), Gu Jin-Hua(谷锦华), and Lu Jing-Xiao(卢景霄). Chin. Phys. B, 2010, 19(10): 106803.
No Suggested Reading articles found!