A quantum efficiency analytical model for complementary metal–oxide–semiconductor image pixels with a pinned photodiode structure

doi:10.1088/1674-1056/23/12/124215

Abstract A quantum efficiency analytical model for complementary metal–oxide–semiconductor (CMOS) image pixels with a pinned photodiode structure is developed. The proposed model takes account of the non-uniform doping distribution in the N-type region due to the impurity compensation formed by the actual fabricating process. The characteristics of two boundary PN junctions located in the N-type region for the particular spectral response of a pinned photodiode, are quantitatively analyzed. By solving the minority carrier steady-state diffusion equations and the barrier region photocurrent density equations successively, the analytical relationship between the quantum efficiency and the corresponding parameters such as incident wavelength, N-type width, peak doping concentration, and impurity density gradient of the N-type region is established. The validity of the model is verified by the measurement results with a test chip of 160× 160 pixels array, which provides the accurate process with a theoretical guidance for quantum efficiency design in pinned photodiode pixels.

Keywords: CMOS image sensor quantum efficiency pinned photodiode analytical model

Received: 18 May 2014
Revised: 24 June 2014
Accepted manuscript online:

PACS:	42.79.Pw	(Imaging detectors and sensors)
	85.30.-z	(Semiconductor devices)
	78.40.Fy	(Semiconductors)

Fund: Project supported by the National Defense Pre-Research Foundation of China (Grant No. 51311050301095).

Corresponding Authors: Cao Chen
E-mail: intercaochen@163.com

Cite this article:

Cao Chen (曹琛), Zhang Bing (张冰), Wu Long-Sheng (吴龙胜), Li Na (李娜), Wang Jun-Feng (王俊峰) A quantum efficiency analytical model for complementary metal–oxide–semiconductor image pixels with a pinned photodiode structure 2014 Chin. Phys. B 23 124215


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A quantum efficiency analytical model for complementary metal–oxide–semiconductor image pixels with a pinned photodiode structure

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