Improved device reliability in organic light emitting devices by controlling the etching of indium zinc oxide anode

doi:10.1088/1674-1056/23/11/118508

Abstract A controllable etching process for indium zinc oxide (IZO) films was developed by using a weak etchant of oxalic acid with a slow etching ratio. With controllable etching time and temperature, a patterned IZO electrode with smoothed surface morphology and slope edge was achieved. For the practical application in organic light emitting devices (OLEDs), a suppression of the leak current in the current-voltage characteristics of OLEDs was observed. It resulted in a 1.6 times longer half lifetime in the IZO-based OLEDs compared to that using an indium tin oxide (ITO) anode etched by a conventional strong etchant of aqua regia.

Keywords: indium zinc oxide (IZO) organic light emitting device (OLED) leak current lifetime

Received: 14 March 2014
Revised: 26 April 2014
Accepted manuscript online:

PACS:	85.60.Jb	(Light-emitting devices)
	81.05.Fb	(Organic semiconductors)
	81.16.Rf	(Micro- and nanoscale pattern formation)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61307036 and 61307037), the Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD), China, and the University Science Research Project of Jiangsu Province, China (Grant No. 12KJB510028).

Corresponding Authors: Wang Zhao-Kui
E-mail: zhaokuiwang@hotmail.com

Cite this article:

Liao Ying-Jie (廖英杰), Lou Yan-Hui (娄艳辉), Wang Zhao-Kui (王照奎), Liao Liang-Sheng (廖良生) Improved device reliability in organic light emitting devices by controlling the etching of indium zinc oxide anode 2014 Chin. Phys. B 23 118508

[1]	Forrest S R 2004 Nature 428 911
[2]	Zhu X Z, Han Y Y, Liu Y, Lv P, Xu M F, Ruan K Q, Wang Z K, Jie J S and Liao L S 2013 Org. Electron. 14 3348
[3]	Qu S, Peng J C and Li H J 2005 Chin. Phys. Lett. 22 719
[4]	Peng Y Q, He X Y and Tai X S 2002 Chin. Phys. 11 1076
[5]	Wang Z K, Lou Y H, Naka S and Okada H 2011 AIP Adv. 1 032130
[6]	Burrows P E, Bulovic V, Forrest S R, Sapochak L S, McCarty D M and Thompson M E 1994 Appl. Phys. Lett. 65 2922
[7]	Nan J, Xie Z Y and Dai G R 1998 Chin. Phys. Lett. 15 537
[8]	Ma Y G, Tian W J and Shen J C 2000 Chin. Phys. Lett. 17 454
[9]	Wang Z K, Naka S and Okada H 2010 Jpn. J. Appl. Phys. 49 01AA02
[10]	Popovic Z D and Aziz H 2002 IEEE J. Select. Topics Quantum Electron. 8 362
[11]	Aziz H and Popovic Z D 2004 Chem. Mater. 16 4522
[12]	Wang Z K, Naka S and Okada H 2009 Thin Solid Films 518 497
[13]	Wu C C, Wu C I, Sturm J C and Kahn A 1997 Appl. Phys. Lett. 70 1348
[14]	Friend R H, Gymer R W, Holmes A B, Burroughes J H, Marks R N, Taliani C, Bradely D D C, Santos D A D, Bredas J L, Logdlund M and Salaneck W R 1999 Nature 397 121
[15]	Nuesch F, Forsythe E W, Le Q T, Gao Y and Rothberg L J 2000 J. Appl. Phys. 87 7973
[16]	Hsieh H C, Chang S C and Tsai Y M 2003 SID 03 Digest 498
[17]	Wang Z K, Lou Y H, Naka S and Okada H 2011 ACS Appl. Mater. Interfaces 3 2496
[18]	Jonda C, Mayer A B R, Stolz U, Llschner A and Karbach A 2000 J. Mater. Sci. 35 5645
[19]	Tak Y H, Kim K B, Park H G, Lee K H and Lee J R 2002 Thin Solid Films 411 12
[20]	Kim K B, Tak Y H, Han Y S, Baik K H, Yoon M H and Lee M H 2003 Jpn. J. Appl. Phys. 42 L438
[21]	Fukushi Y, Kominami H, Nakanishi Y and Hatanaka Y 2005 Appl. Sur. Sci. 244 537
[22]	Choi B, Rhee J and Lee H H 2001 Appl. Phys. Lett. 79 2109
[23]	Campbell I H, Kress J D, Martin R L, Smith D L, Barashkov N N and Ferraris J P 1997 Appl. Phys. Lett. 71 3528
[24]	Mohir M, Kakinuma H and Sakamoto M 1990 Jpn. J. Appl. Phys. 29 1932
[25]	Huang C, Su Y and Wu S 2004 Mater. Chem. Phys. 84 146

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Improved device reliability in organic light emitting devices by controlling the etching of indium zinc oxide anode

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