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A two-dimensional analytical model for channel potential and threshold voltage of short channel dual material gate lightly doped drain MOSFET |
| Shweta Tripathi |
| Department of Electronics & Communication Engineering, Motilal Nehru National Institute of Technology, Allahabad-211004, India |
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Abstract An analytical model for the channel potential and the threshold voltage of the short channel dual-material-gate lightly doped drain (DMG-LDD) metal-oxide-semiconductor field-effect transistor (MOSFET) is presented using the parabolic approximation method. The proposed model takes into account the effects of the LDD region length, the LDD region doping, the lengths of the gate materials and their respective work functions, along with all the major geometrical parameters of the MOSFET. The impact of the LDD region length, the LDD region doping, and the channel length on the channel potential is studied in detail. Furthermore, the threshold voltage of the device is calculated using the minimum middle channel potential, and the result obtained is compared with the DMG MOSFET threshold voltage to show the improvement in the threshold voltage roll-off. It is shown that the DMG-LDD MOSFET structure alleviates the problem of short channel effects (SCEs) and the drain induced barrier lowering (DIBL) more efficiently. The proposed model is verified by comparing the theoretical results with the simulated data obtained by using the commercially available ATLASTM 2D device simulator.
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Received: 19 February 2014
Revised: 24 April 2014
Accepted manuscript online:
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PACS:
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85.30.Tv
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(Field effect devices)
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85.30.-z
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(Semiconductor devices)
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73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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12.39.Pn
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(Potential models)
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Corresponding Authors:
Shweta Tripathi
E-mail: shtri@mnnit.ac.in
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Cite this article:
Shweta Tripathi A two-dimensional analytical model for channel potential and threshold voltage of short channel dual material gate lightly doped drain MOSFET 2014 Chin. Phys. B 23 118505
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