Unique electrical properties of nanostructured diamond cones

doi:10.1088/1674-1056/22/09/098107

Abstract The preparation and electrical properties of diamond nanocones are reviewed, including a maskless etching process and mechanism of large-area diamond conical nanostructure arrays using a hot filament chemical vapor deposition (HFCVD) system with negatively biased substrates, and the field electron emission, gas sensing, and quantum transport properties of a diamond nanocone array or an individual diamond nanocone. Optimal cone aspect ratio and array density are investigated, along with the relationships between the cone morphologies and experimental parameters, such as the CH₄/H₂ ratio of the etching gas, the bias current, and the gas pressure. The reviewed experiments demonstrate the possibility of using nanostructured diamond cones as a display device element, a point electron emission source, a gas sensor or a quantum device.

Keywords: diamond nanocone quantum device

Received: 02 August 2013
Accepted manuscript online:

PACS:	81.05.ug	(Diamond)
	81.07.-b	(Nanoscale materials and structures: fabrication and characterization)
	73.63.Rt	(Nanoscale contacts)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 51272278, 11174362, and 91023041), the National Basic Research Program of China (Grant No. 2009CB930502), and the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant No. KJCX2-EW-W02).

Corresponding Authors: Gu Chang-Zhi, Li Jun-Jie
E-mail: czgu@iphy.ac.cn; jjli@iphy.ac.cn

Cite this article:

Gu Chang-Zhi (顾长志), Wang Qiang (王强), Li Jun-Jie (李俊杰), Xia Ke (夏钶) Unique electrical properties of nanostructured diamond cones 2013 Chin. Phys. B 22 098107

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Unique electrical properties of nanostructured diamond cones

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