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Chin. Phys. B, 2013, Vol. 22(9): 094208    DOI: 10.1088/1674-1056/22/9/094208
ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS Prev   Next  

High power 2-μm room-temperature continuous-wave operation of GaSb-based strained quantum-well lasers

Xu Yun (徐云), Wang Yong-Bin (王永宾), Zhang Yu (张宇), Song Guo-Feng (宋国峰), Chen Liang-Hui (陈良惠)
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract  A high power GaSb-based laser diode with lasing wavelength at 2 μm was fabricated and optimized. With the optimized epitaxial laser structure, the internal loss and the threshold current density decreased and the internal quantum efficiency increased. For uncoated broad-area lasers, the threshold current density was as low as 144 A/cm2 (72 A/cm2 per quantum well), and the slope efficiency was 0.2 W/A. The internal loss was 11 cm-1 and the internal quantum efficiency was 27.1%. The maximum output power of 357 mW under continuous-wave operation at room temperature was achieved. The electrical and optical properties of the laser diode were improved.
Keywords:  GaIn(As)Sb/AlGaAsSb diode lasers      threshold current density      output power  
Received:  15 January 2013      Revised:  08 March 2013      Accepted manuscript online: 
PACS:  42.55.Px (Semiconductor lasers; laser diodes)  
  42.60.Jf (Beam characteristics: profile, intensity, and power; spatial pattern formation)  
Fund: Project supported by the Beijing Natural Science Foundation, China (Grant No. 4112058).
Corresponding Authors:  Song Guo-Feng     E-mail:  sgf@semi.ac.cn

Cite this article: 

Xu Yun (徐云), Wang Yong-Bin (王永宾), Zhang Yu (张宇), Song Guo-Feng (宋国峰), Chen Liang-Hui (陈良惠) High power 2-μm room-temperature continuous-wave operation of GaSb-based strained quantum-well lasers 2013 Chin. Phys. B 22 094208

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