Surface saturation control on the formation of wurtzite polytypes in zinc blende SiC nanofilms grown on Si-(100) substrates

doi:10.1088/1674-1056/22/8/086802

Abstract We investigate the formations of wurtzite (WZ) SiC nano polytypes in zinc blende (ZB) SiC nanofilms hetero-grown on Si-(100) substrates via low pressure chemical vapor deposition (LPCVD) by adjusting the Si/C ratio of the introduced precursors. Through SEM, TEM, and Raman characterizations, we find that the nanofilms consist of discrete WZ SiC nano polytypes and ZB SiC polytypes composed of WZ polytypes (WZ+ZB) and disordered ZB SiC polytypes, respectively, according to Si/C ratios of 0.5, 1.5, and 3. We attribute the WZ polytype formation to being due to a kinetic mechanism based on the Si/C surface saturation control.

Keywords: SiC wurtzite zinc blende nanofilm

Received: 30 December 2012
Revised: 07 March 2013
Accepted manuscript online:

PACS:	68.55.-a	(Thin film structure and morphology)
	71.20.Nr	(Semiconductor compounds)
	81.07.Bc	(Nanocrystalline materials)
	81.15.Kk	(Vapor phase epitaxy; growth from vapor phase)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61274007) and the Beijing Natural Science Foundation, China (Grant No. 4132074).

Corresponding Authors: Liu Xing-Fang
E-mail: liuxf@mail.semi.ac.cn

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Liu Xing-Fang (刘兴昉), Sun Guo-Sheng (孙国胜), Liu Bin (刘斌), Yan Guo-Guo (闫果果), Guan Min (关敏), Zhang Yang (张杨), Zhang Feng (张峰), Dong Lin (董林), Zheng Liu (郑柳), Liu Sheng-Bei (刘胜北), Tian Li-Xin (田丽欣), Wang Lei (王雷), Zhao Wan-Shun (赵万顺), Zeng Yi-Ping (曾一平) Surface saturation control on the formation of wurtzite polytypes in zinc blende SiC nanofilms grown on Si-(100) substrates 2013 Chin. Phys. B 22 086802

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Surface saturation control on the formation of wurtzite polytypes in zinc blende SiC nanofilms grown on Si-(100) substrates

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