| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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A dual-gate and dielectric-inserted lateral trench insulated gate bipolar transistor on a silicon-on-insulator substrate |
| Fu Qiang (付强), Zhang Bo (张波), Luo Xiao-Rong (罗小蓉), Li Zhao-Ji (李肇基) |
| State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China |
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Abstract In this paper, a novel dual-gate & dielectric-inserted lateral trench insulated gate bipolar transistor (DGDI LTIGBT) structure which features the double extended trench gate and dielectric-inserted in the drift region is proposed and discussed. The device can not only decrease the specific on-resistance Ron,sp but also simultaneously improve the temperature performance. Simulation results show that the proposed LTIGBT achieves an ultra-low on-state voltage drop of 1.31 V at 700 A·cm-2 with a small half-cell pitch of 10.5 μm, a specific on-resistance Ron,sp of 187 mΩ·mm2, and a high breakdown voltage of 250 V. The on-state voltage drop of the DGDI LTIGBT is 18% less than that of the DI LTIGBT and 30.3% less than that of the conventional LTIGBT. The proposed LTIGBT exhibits a good positive temperature coefficient for safety paralleling to handling larger currents and enhances the short-circuit capability while maintaining a low self-heating effect. Furthermore, it also shows a better tradeoff between the specific on-resistance and the turnoff loss, although it has a longer turnoff delay time.
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Received: 18 January 2013
Revised: 27 February 2013
Accepted manuscript online:
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PACS:
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73.40.Ty
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(Semiconductor-insulator-semiconductor structures)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.30.Pq
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(Bipolar transistors)
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| Fund: Project supported by the Major Program of the National Natural Science Foundation of China (Grant No. 2009ZX02305-006) and the National Natural Science Foundation of China (Grant No. 61076082). |
Corresponding Authors:
Fu Qiang
E-mail: fuqiang17@gmail.com
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Cite this article:
Fu Qiang (付强), Zhang Bo (张波), Luo Xiao-Rong (罗小蓉), Li Zhao-Ji (李肇基) A dual-gate and dielectric-inserted lateral trench insulated gate bipolar transistor on a silicon-on-insulator substrate 2013 Chin. Phys. B 22 077309
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