Droop improvement in blue InGaN light emitting diode with GaN/InGaN superlattice barriers

doi:10.1088/1674-1056/22/6/068505

Abstract GaN/InGaN superlattice barriers are used in InGaN-based light-emitting diodes (LEDs). The electrostatic field in the quantum wells, electron hole wavefunction overlap, carrier concentration, spontaneous emission spectrum, light-current performance curve, and internal quantum efficiency are numerically investigated by using the APSYS simulation software. It is found that the structure with GaN/InGaN superlattice barriers shows the improved light output power, lower current leakage, and efficiency droop. According to our numerical simulation and analysis, these improvements in the electrical and optical characteristics are mainly attributed to alleviation of the electrostatic field in the active region.

Keywords: GaN-based light-emitting diodes GaN/InGaN superlattice barriers electrostatic field

Received: 05 August 2012
Revised: 31 October 2012
Accepted manuscript online:

PACS:	85.60.Jb	(Light-emitting devices)
	87.15.A-	(Theory, modeling, and computer simulation)
	78.60.Fi	(Electroluminescence)
	73.61.Ey	(III-V semiconductors)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 51172079), the Science and Technology Program of Guangdong Province, China (Grant Nos. 2010B090400456 and 2010A081002002), and the Science and Technology Program of Guangzhou, China (Grant No. 2011J4300018).

Corresponding Authors: Li Shu-Ti
E-mail: lishuti@scnu.edu.cn

Cite this article:

Tong Jin-Hui (童金辉), Zhao Bi-Jun (赵璧君), Wang Xing-Fu (王幸福), Chen Xin (陈鑫), Ren Zhi-Wei (任志伟), Li Dan-Wei (李丹伟), Zhuo Xiang-Jing (卓祥景), Zhang Jun (章俊), Yi Han-Xiang (易翰翔), Li Shu-Ti (李述体) Droop improvement in blue InGaN light emitting diode with GaN/InGaN superlattice barriers 2013 Chin. Phys. B 22 068505

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Droop improvement in blue InGaN light emitting diode with GaN/InGaN superlattice barriers

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