Temperature dependence of single event transient in 90-nm CMOS dual-well and triple-well NMOSFETs

doi:10.1088/1674-1056/22/2/029401

Abstract This paper investigates the temperature dependence of single event transient (SET) in 90-nm complementary metat-oxide semiconductor (CMOS) dual-well and triple-well negative metal-oxide semiconductor field-effect transistors (NMOSFETs). Technology computer-aided design (TCAD) three-dimensional (3D) simulations show that the drain current pulse duration increases from 85 ps to 245 ps for triple-well but only increases from 65 ps to 98 ps for dual-well when the temperature increases from -55℃ to 125℃, which is closely correlated with the source of NMOSFETs. This reveals that the pulse width increases with temperature in dual-well due to the weakening of anti-amplification bipolar effect while increases with temperature in triple-well due to the enhancement of the bipolar amplification.

Keywords: single event transient temperature dependence dual-well triple-well N⁺ deep well

Received: 30 June 2012
Revised: 17 August 2012
Accepted manuscript online:

PACS:	94.05.Dd	(Radiation processes)
	85.30.Tv	(Field effect devices)
	02.60.Cb	(Numerical simulation; solution of equations)

Fund: Project supported by the State Key Program of the National Natural Science Foundation of China (Grant No. 60836004) and Innovation Foundation for Postgraduate of Hunan Province, China (Grant No. CX2011B026).

Corresponding Authors: Qin Jun-Rui
E-mail: qinjr@nudt.edu.cn

Cite this article:

Li Da-Wei (李达维), Qin Jun-Rui (秦军瑞), Chen Shu-Ming (陈书明) Temperature dependence of single event transient in 90-nm CMOS dual-well and triple-well NMOSFETs 2013 Chin. Phys. B 22 029401

[1]	He C H, Geng B, He B P, Yao Y J, Li Y H, Peng H L, Lin D S, Zhou H and Chen Y S 2004 Acta Phys. Sin. 53 194 (in Chinese)
[2]	Liu Z, Chen S M, Liang B, Liu B W and Zhao Z Y 2009 Acta Phys. Sin. 59 649 (in Chinese)
[3]	Qin J R, Chen S M, Liu B W, Liu Z, Liang B and Du Y K 2011 Chin. Phys. B 20 129401
[4]	Qin J R, Chen S M, Liang B and Liu B W 2012 Chin. Phys. B 21 029401
[5]	Chen S M, Liang B, Liu B W and Liu Z 2008 IEEE Trans. Nucl. Sci. 55 2914
[6]	Liu B W, Chen S M, Liang B, Liu Z and Zhao Z Y 2009 IEEE Trans. Nucl. Sci. 56 2473
[7]	Gadlage M J, Ahlbin J R, Ramachandran V, Gouker P, Dinkins C A and Bhuva B L 2009 IEEE Trans. Nucl. Sci. 56 3115
[8]	Roy T, Witulski A F, Schrimpf R D, Alles M L and Massengill L W 2008 IEEE Trans. Nucl. Sci. 55 2948
[9]	Bevilacqua A and Niknejad A M 2004 IEEE Solid-State Circuits 39 2259
[10]	Liu B W, Chen J J, Chen S M and Chi Y Q 2012 Acta Phys. Sin. 61 096102 (in Chinese)
[11]	Atkinson N M 2010 "Single-Event Characterization of a 90-nm Bulk CMOS Digital Cell Library", M.S. thesis, Dept. Elect. Eng., Vanderbilt University, USA
[12]	Turowski M, Raman A and Jablonski G 2007 14th International Conference on Mixed Design of Integrated Circuits and Systems, Ciechocinek, Poland

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Temperature dependence of single event transient in 90-nm CMOS dual-well and triple-well NMOSFETs

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