Influence of wet chemical cleaning on quantum efficiency of GaN photocathode

doi:10.1088/1674-1056/22/2/027901

Abstract GaN samples 1-3 are cleaned by a 2:2:1 solution of sulfuric acid (98%) to hydrogen peroxide (30%) to de-ionized water; hydrochloric acid (37%); or a 4:1 solution of sulfuric acid (98%) to hydrogen peroxide (30%). The samples are activated by Cs/O after the same annealing process. X-ray photoelectron spectroscopy after the different ways of wet chemical cleaning shows: sample 1 has the largest proportion of Ga, N, and O among the three samples, while its C content is the lowest. After activation the quantum efficiency curves show sample 1 has the best photocathode performance. We think the wet chemical cleaning method is a process which will mainly remove C contamination.

Keywords: GaN photocathode X-ray photoelectron spectroscopy wet chemical cleaning quantum efficiency

Received: 17 April 2012
Revised: 24 August 2012
Accepted manuscript online:

PACS:	79.60.-i	(Photoemission and photoelectron spectra)
	72.80.-r	(Conductivity of specific materials)
	73.20.-r	(Electron states at surfaces and interfaces)
	73.61.-r	(Electrical properties of specific thin films)

Fund: Projects supported by the National Natural Science Foundation of China (Grant No. 60871012); the National Key Laboratory of Science and Technology Foundation on Low Light Level Night Vision (Grant No. J20110104); and the Research and Innovation Plan for Graduate Students of Jiangsu Higher Education Institutions (Grant No. CXZZ11_0238).

Corresponding Authors: Chang Ben-Kang
E-mail: bkchang@njust.mail.edu.cn

Cite this article:

Wang Xiao-Hui (王晓晖), Gao Pin (高频), Wang Hong-Gang (王洪刚), Li Biao (李飙), Chang Ben-Kang (常本康) Influence of wet chemical cleaning on quantum efficiency of GaN photocathode 2013 Chin. Phys. B 22 027901

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Influence of wet chemical cleaning on quantum efficiency of GaN photocathode

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