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| Post-annealing effect on the structural and mechanical properties of multiphase zirconia films deposited by a plasma focus device |
| I. A. Khana, R. S. Rawatb, R. Ahmadc, M. A. K. Shahida |
a Department of Physics, Government College University, 38000 Faisalabad, Pakistan;
b National Institute of Education, Nanyang Technological University, Singapore 637616, Singapore;
c Department of Physics, GC University, 54000 Lahore, Pakistan |
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Abstract Nanostructured multiphase zirconia films (MZFs) are deposited on Zr substrate by the irradiation of energetic oxygen ions emanated from a plasma focus device. The oxygen operating gas pressure of 1 mbar (1 bar=105 Pa) provides the most appropriate ion energy flux to deposit crystalline ZrO2 films. X-ray diffraction (XRD) patterns reveal the formation of polycrystalline ZrO2 films. The crystallite size (CS), crystal growth, and dislocation densities are attributed to increasing focus shots, sample axial distances, and working gas pressures. Phase and orientation transformations from t-ZrO2 to m-ZrO2 and c-ZrO2 are associated with increasing focus shots and continuous annealing. For lower (200 ℃) annealing temperature (AT), full width at half maximum (FWHM) of diffraction peak, CS, and dislocation density (δ) for (020) plane are found to be 0.494, 16.6 nm, and 3.63×10-3 nm-2 while for higher (400 ℃) AT, these parameters for (111) plane are found to be 0.388, 20.87 nm, and 2.29×10-3 nm-2, respectively. Scanning electron microscope (SEM) results demonstrate the formation of rounded grains with uniform distribution. The estimated values of atomic ratio (O/Zr) in ZrO2 films deposited for different axial distances (6 cm, 9 cm, and 12 cm) are found to be 2.1, 2.2, and 2.3, respectively. Fourier transform infrared (FTIR) analysis reveals that the bands appearing at 441 cm-1 and 480 cm-1 belong to m-ZrO2 and t-ZrO2 phases, respectively. Maximum microhardness (8.65±0.45 GPa) of ZrO2 film is ～ 6.7 times higher than the microhardness of virgin Zr.
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Received: 27 March 2013
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73.50.Lw
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(Thermoelectric effects)
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68.60.Bs
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(Mechanical and acoustical properties)
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68.55.J-
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(Morphology of films)
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61.72.-y
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(Defects and impurities in crystals; microstructure)
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| Fund:Project supported by the Higher Education Commission of Pakistan. |
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Corresponding Authors: I. A. Khan
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E-mail: ejaz_phd@yahoo.com
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| [1] |
Garvie R C, Hannink R H and Pascoe R T 1975 Nature 258 703
|
| [2] |
Wilk G D, Wallace R M and Anthony J M 2001 J. Appl. Phys. 89 5243
|
| [3] |
Wright P K and Evans A G 1999 Solid State Mater. Sci. 4 255
|
| [4] |
Zhou X, Balachov I and Macdonald D D 1998 Corros. Sci. 40 1349
|
| [5] |
Nguyen T and Djurado E 2001 Solid State Ion. 138 191
|
| [6] |
Perkins C M, Triplett B B, Mclntyre P C, Saraswat K C, Haukka S and Tuominen M 2001 Appl. Phys. Lett. 78 2357
|
| [7] |
Zhao X and Vanderbilt D 2002 Phys. Rev. B 65 075105
|
| [8] |
Zhao X and Vanderbilt D 2005 Phys. Rev. B 71 085107
|
| [9] |
Hwang S M, Lee S M, Park K, Lee M S, Joo J, Lim J H, Kim H, Yoon J J and Kim Y D 2011 Appl. Phys. Lett. 98 022903
|
| [10] |
Panda D and Tseng T-Y 2013 Thin Solid Films 531 1
|
| [11] |
Piconi C and Maccauro G 1999 Biomaterials 20 1
|
| [12] |
Namavar F, Wang G, Cheung C L, Sabirianov R, Zeng X C, Mei W N, Bai J, Brewer J R, Haider H and Garvin K L 2007 Nanotechnology 18 415702
|
| [13] |
Sattonnay G and Thome L 2006 J. Nucl. Mater. 348 223
|
| [14] |
Chraska T, King A H and Berndt C C 2000 Mater. Sci. Eng. A 286 169
|
| [15] |
Aguilar D H, Torres-Gonzalez L C, Torres-Martinez L M, Lopez T and Quintana P 2000 J. Solid State Chem. 158 349
|
| [16] |
Lee S, Tou T Y, Moo S P, Eissa M A, Gholap A V, Kwek K W, Mulyodrono S, Smith A J, Suryadi S, Usada W and Zakaullah M 1988 Am. J. Phys. 56 62
|
| [17] |
Ahmad R, Sadiq M, Hussain S, Shafiq M, Zakaullah M and Waheed A 2006 Rev. Sci. Instrum. 77 013504
|
| [18] |
Bhuyan H, Favre M, Valderrama E, Chuaqui H and Wyndham E 2006 J. Phys. D: Appl. Phys. 39 3596
|
| [19] |
Rawat R S, Srivastava M P, Tandon S and Mansingh A 1993 Phys. Rev. B 47 4858
|
| [20] |
Rawat R S, Arun P, Videshwar A G, Lam Y L, Lee P, Liu M H, Lee S and Huan A C H 2000 Mater. Res. Bull. 35 477
|
| [21] |
Rawat R S, Arun P, Videshwar A G, Lee P and Lee S 2004 J. Appl. Phys. 95 7725
|
| [22] |
Borthakur T K, Sahu A, Mohanty S R, Nayak B B and Acharya B S 1999 Surf. Eng. 15 55
|
| [23] |
Gupta R and Srivastava M P 2004 Plasma Sour. Sci. Technol. 13 371
|
| [24] |
Kant C R, Srivastava M P and Rawat R S 1997 Phys. Lett. A 226 212
|
| [25] |
Rawat R S, Lee P, White T, Ling L and Lee S 2001 Surf. Coat. Technol. 138 159
|
| [26] |
Hassan M, Qayyum A, Ahmad R, Murtaza G and Zakaullah M 2007 J. Phys. D: Appl. Phys. 40 769
|
| [27] |
Khan I A, Hassan M, Ahmad R, Qayyum A, Murtaza G, Zakaullah M and Rawat R S 2008 Thin Solid Films 516 8255
|
| [28] |
Khan I A, Hassan M, Ahmad R, Murtaza G, Zakaullah M, Rawat R S and Lee P 2008 Int. J. Mod. Phys. B 22 3941
|
| [29] |
Khan I A, Hassan M, Hussain T, Ahmad R, Zakaullah M and Rawat R S 2009 Appl. Surf. Sci. 255 6132
|
| [30] |
Nayak B B, Acharya B S, Mohanty S R, Borthakur T K and Bhuyan H 2001 Surf. Coat. Technol. 145 8
|
| [31] |
Ahmad R, Hassan M, Murtaza G, Akhter J I, Qayyum A, Waheed A and Zakaullah M 2006 Rad. Eff. Deff. Solids 161 121
|
| [32] |
Choi P, Deeney C, Herold H and Wong C S 1990 Laser Part. Beams 8 469
|
| [33] |
Sadowski M, Schmidt H and Herold H 1981 Phys. Lett. A 83 435
|
| [34] |
Williamson G B and Smallman R C 1956 Philos. Mag. 1 34
|
| [35] |
Wang X S, Wu Z C, Webb J F and Liu Z G 2003 Appl. Phys. A 77 561
|
| [36] |
Khan Z R, Zulfequar M and Khan M S 2010 Mater. Sci. Eng. B 174 145
|
| [37] |
Khan Z R, Khan Mohd Shoeb, Zulfequar M and Khan Mohd Shahid 2011 Mater. Sci. Appl. 2 340
|
| [38] |
Kelly H, Lepone A and Marquez A 1998 IEEE Trans. Plasma Sci. 26 113
|
| [39] |
Nunomura S, Koga K and Shitarani M 2005 Jpn. J. Appl. Phys. Part Ⅱ 44 L1509
|
| [40] |
Lee S and Saw S H 2012 Phys. Plasmas 19 112703
|
| [41] |
Sadiq M, Shafiq M, Ahmad W, Ahmad R and Zakaullah M 2006 Phys. Lett. A 352 150
|
| [42] |
Tian G, Huang J, Wang T, He H and Shao J 2005 J. Appl. Surf. Sci. 239 201
|
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2013, Vol. 22 
