Polarization readout analysis for multilevel phase change recording by crystallization degree modulation

doi:10.1088/1674-1056/22/12/124208

Abstract Four different states of Si₁₅Sb₈₅ and Ge₂Sb₂Te₅ phase change memory thin films are obtained by crystallization degree modulation through laser initialization at different powers or annealing at different temperatures. The polarization characteristics of these two four-level phase change recording media are analyzed systematically. A simple and effective readout scheme is then proposed, and the readout signal is numerically simulated. The results show that a high-contrast polarization readout can be obtained in an extensive wavelength range for the four-level phase change recording media using common phase change materials. This study will help in-depth understanding of the physical mechanisms and provide technical approaches to multilevel phase change recording.

Keywords: optical data storage phase change memory materials multilevel recording polarization readout

Received: 18 March 2013
Revised: 08 April 2013
Accepted manuscript online:

PACS:	42.70.Ln	(Holographic recording materials; optical storage media)
	42.79.Vb	(Optical storage systems, optical disks)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61178059 and 61137002) and the Key Program of the Science and Technology Commission of Shanghai Municipality, China (Grant No. 11jc1413300).

Corresponding Authors: Wang Yang
E-mail: ywang@siom.ac.cn

Cite this article:

Lin Jin-Cheng (林金成), Long Guo-Yun (龙国云), Wang Yang (王阳), Wu Yi-Qun (吴谊群) Polarization readout analysis for multilevel phase change recording by crystallization degree modulation 2013 Chin. Phys. B 22 124208

[1]	Ovshinsky S R and Czubatyj W 2001 Proc. SPIE 4085 15
[2]	Ohta A 2001 J. Optoelectron. Adv. Mater. 3 609
[3]	Ovshinsky S R 1982 Disordered Materials: Science and Technology (Michigan: Amorphous Institute Press) pp. 2-22
[4]	Ovshinsky S R 1999 Materials Research Society Symposium Proceedings 554 399
[5]	Ohta T, Nishiuchi K, Narumi K, Kitaoka Y, Ishibashi H, Yamada N and Kozaki T 2000 Jpn. J. Appl. Phys. 39 770
[6]	Kiyono K, Horie M, Ohno T, Uematsu T, Hashizume T, Neill M P O, Balasubramanian K, Narayan R, Warland D and Zhou T 2001 Jpn. J. Appl. Phys. 40 1855
[7]	Shi L P, Chong T C, Tan P K, Miao X S, Huang Y M and Zhao R 1999 Jpn. J. Appl. Phys. 38 1645
[8]	Liu B, Zhang T, Xia J, Song Z, Feng S and Chen B 2004 Semicond. Sci. Technol. 19 L61
[9]	Shieh H P D, Chen Y L and Wu C H 2001 Jpn. J. Appl. Phys. 40 1850
[10]	Xiao J X, Qi G S, She P, Liu R and Xu D Y 2003 Chin. Phys. 12 1241
[11]	Zhang Y, Feng J, Zhang Y, Zhang Z, Lin Y, Tang T, Cai B and Chen B 2007 Phys. Status Solidi (RRL) 1 R28
[12]	Hu Y, Sun M, Song S, Song Z and Zhai J 2012 Integr. Ferroelectr. 140 8
[13]	Mansuripu M, Connell G A N and Goodman J W 1982 J. Appl. Phys. 53 4485
[14]	Shimazaki K, Yoshihiro M, Ishizaki O, Ohnuki S and Ohta N 1995 Proc. Magnetic-Optical Recording International Symposium 94 429
[15]	Tsuru T and Yamamoto M 2008 Opt. Express 16 9622
[16]	Yasui T and Saiki T 2011 Jpn. J. Appl. Phys. 50 072502
[17]	Xiang C and Chou L 2010 Appl. Phys. Lett. 96 171105
[18]	Born M and Wolf E 1999 Principles of Optics (7th expanded edition) (Cambridge: Cambridge University Press) pp. 25-29
[19]	Zhang T, Song Z, Wang F, Liu B, Feng S and Chen B 2007 Appl. Phys. Lett. 91 222102
[20]	Huang H, Li S, Zhai F, Wang Y, Lai T, Wu Y and Gan F 2011 Mater. Chem. Phys. 128 405
[21]	Huang H, Zuo F, Zhai F, Wang Y, Lai T, Wu Y and Gan F 2009 J. Appl. Phys. 106 063501
[22]	Zuo F, Wang Y, Wu Y and Lai T 2009 Acta Phys. Sin. 58 7250 (in Chinese)

[1]	Unconventional phase transition of phase-change-memory materials for optical data storage Nian-Ke Chen(陈念科), Xian-Bin Li(李贤斌). Chin. Phys. B, 2019, 28(10): 104202.
[2]	Restriction of shot noise and material noise in a multilevel photochromic memory on signal-to-noise ratio Zhang Qi-Cheng(张启程), Ni Yi(倪屹), Xu Duan-Yi(徐端颐), and Hu Heng(胡恒). Chin. Phys. B, 2006, 15(8): 1783-1787.
[3]	Multilevel optical data recording methods on phase-change media Xiao Jia-Xi (肖家曦), Qi Guo-Sheng (齐国生), She Peng (佘鹏), Liu Rong (刘嵘), Xu Duan-Yi (徐端颐). Chin. Phys. B, 2003, 12(11): 1241-1245.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Polarization readout analysis for multilevel phase change recording by crystallization degree modulation

Cite this article:

Online attention