Scaling effects of single-event gate rupture in thin oxides

doi:10.1088/1674-1056/22/11/118501

Abstract The dynamics of the excess carriers generated by incident heavy ions are considered in both SiO₂ and Si substrate. Influences of the initial radius of the charge track, surface potential decrease, external electric field, and the LET value of the incident ion on internal electric field buildup are analyzed separately. Considering the mechanisms of recombination, impact ionization, and bandgap tunneling, models are verified by using published experimental data. Moreover, the scaling effects of single-event gate rupture in thin gate oxides are studied, with the feature size of the MOS device down to 90 nm. The value of the total electric field decreases rapidly along with the decrease of oxide thickness in the first period (12 nm to 3.3 nm), and then increases a little when the gate oxide becomes thinner and thinner (3.3 nm to 1.8 nm).

Keywords: single-event gate rupture (SEGR) heavy ion thin oxides TCAD simulation

Received: 21 March 2013
Revised: 18 April 2013
Accepted manuscript online:

PACS:	85.30.De	(Semiconductor-device characterization, design, and modeling)
	61.80.-x	(Physical radiation effects, radiation damage)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

Corresponding Authors: Ding Li-Li
E-mail: lili03.ding@gmail.com

Cite this article:

Ding Li-Li (丁李利), Chen Wei (陈伟), Guo Hong-Xia (郭红霞), Yan Yi-Hua (闫逸华), Guo Xiao-Qiang (郭晓强), Fan Ru-Yu (范如玉) Scaling effects of single-event gate rupture in thin oxides 2013 Chin. Phys. B 22 118501

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Scaling effects of single-event gate rupture in thin oxides

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