Physical model for the exotic ultraviolet photo-conductivity of ZnO nanowire films

doi:10.1088/1674-1056/22/11/118102

Abstract Employing a simple and efficient method of electro-chemical anodization, ZnO nanowire films are fabricated on Zn foil, and an ultraviolet (UV) sensor prototype is formed for investigating the electronic transport through back-to-back double junctions. The UV (365 nm) responses of surface-contacted ZnO film are provided by I–V measurement, along with the current evolution process by on/off of UV illumination. In this paper, the back-to-back metal–seconductor–metal (M–S–M) model is used to explain the electronic transport of a ZnO nanowire film based structure. A thermionic-field electron emission mechanism is employed to fit and explain the as-observed UV sensitive electronic transport properties of ZnO film with surface-modulation by oxygen and water molecular coverage.

Keywords: ZnO nanowires metal–semiconductor–metal contact water modulated surface barrier thermionic-field electron emission

Received: 18 May 2013
Revised: 08 July 2013
Accepted manuscript online:

PACS:	81.16.Be	(Chemical synthesis methods)
	81.07.Gf	(Nanowires)
	72.10.-d	(Theory of electronic transport; scattering mechanisms)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11274082 and 51172194) and the Excellent Young Scientist Research Award Fund of Shandong Province, China (Grant No. BS2011CL002).

Corresponding Authors: Wang Qiang
E-mail: wq750505@hotmail.com

Cite this article:

Pan Yue-Wu (潘跃武), Ren Shou-Tian (任守田), Qu Shi-Liang (曲士良), Wang Qiang (王强) Physical model for the exotic ultraviolet photo-conductivity of ZnO nanowire films 2013 Chin. Phys. B 22 118102

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