Low voltage program-erasable Pd-Al2O3-Si capacitors with Ru nanocrystals for nonvolatile memory application

doi:10.1088/1674-1056/22/11/117308

Abstract Pd-Al₂O₃-Si capacitors with Ru nanocrystals are fabricated and electrically characterized for nonvolatile memory application. While keeping the entire insulator Al₂O₃ thickness fixed, the memory window has a strong dependence on the tunneling layer thickness under low operating voltages, whereas it has weak dependence under high operating voltages. As for the optimal configuration comprised of 6-nm tunneling layer and 22-nm blocking layer, the resulting memory window increases from 1.5 V to 5.3 V with bias pulse increasing from 10^-5 s to 10^-2 s under ±7 V. A ten-year memory window as large as 5.2 V is extrapolated at room temperature after ±8 V/1 ms programming/erasing pulses.

Keywords: metal-oxide-semiconductor capacitors nonvolatile memory Ru nanocrystals atomic-layer-deposition

Received: 04 March 2013
Revised: 23 April 2013
Accepted manuscript online:

PACS:	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	73.61.-r	(Electrical properties of specific thin films)

Fund: Project supported by the National Key Technology Research and Development Program of China (Grant No. 2009ZX02302-002), the National Natural Science Foundation of China (Grant No. 61274088), and the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-08-0127).

Corresponding Authors: Ding Shi-Jin
E-mail: sjding@fudan.edu.cn

Cite this article:

Lan Lan (蓝澜), Gou Hong-Yan (苟鸿雁), Ding Shi-Jin (丁士进), Zhang Wei (张卫) Low voltage program-erasable Pd-Al₂O₃-Si capacitors with Ru nanocrystals for nonvolatile memory application 2013 Chin. Phys. B 22 117308

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Low voltage program-erasable Pd-Al2O3-Si capacitors with Ru nanocrystals for nonvolatile memory application

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Low voltage program-erasable Pd-Al₂O₃-Si capacitors with Ru nanocrystals for nonvolatile memory application