A comparison of the field emission characteristics of vertically aligned graphene sheets grown on different SiC substrates

doi:10.1088/1674-1056/22/10/107901

Abstract The field emission (FE) properties of vertically aligned graphene sheets (VAGSs) grown on different SiC substrates are reported. The VAGSs grown on nonpolar SiC (10-10) substrate show an ordered alignment with the graphene basal plane-parallel to each other, and show better FE features, with a lower turn-on field and a larger field enhancement factor. The VAGSs grown on polar SiC (000-1) substrate reveal a random petaloid-shaped arrangement and stable current emission over 8 hours with a maximum emission current fluctuation of only 4%. The reasons behind the differing FE characteristics of the VAGSs on different SiC substrates are analyzed and discussed.

Keywords: field emission vertically aligned graphene sheets SiC substrate

Received: 09 April 2012
Revised: 06 May 2013
Accepted manuscript online:

PACS:	79.70.+q	(Field emission, ionization, evaporation, and desorption)
	61.48.Gh	(Structure of graphene)

Fund: Project supported by the National Key Basic Research Program of China (Grant No. 2011CB932700) and the National Natural Science Foundation of China (Grant Nos. 51272279, 51072223, and 50972162).

Corresponding Authors: Guo Li-Wei
E-mail: lwguo@iphy.ac.cn

Cite this article:

Chen Lian-Lian (陈莲莲), Guo Li-Wei (郭丽伟), Liu Yu (刘宇), Li Zhi-Lin (李治林), Huang Jiao (黄郊), Lu Wei (芦伟) A comparison of the field emission characteristics of vertically aligned graphene sheets grown on different SiC substrates 2013 Chin. Phys. B 22 107901

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A comparison of the field emission characteristics of vertically aligned graphene sheets grown on different SiC substrates

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