High-power SiC MESFET using dual p-buffer layer for S-band power amplifier

doi:10.1088/1674-1056/22/1/017302

Abstract Silicon carbide (SiC) based metal semiconductor field effect transistor (MESFET) is fabricated by using a standard SiC MESFET structure with the application of a dual p-buffer layer and a multi-recessed gate to the process for S-band power amplifier. The lower doped upper-buffer layer serves to maintain the channel current, while the higher doped lower-buffer layer is used to provide excellent electron confinement in the channel layer. A 20-mm gate periphery SiC MESFET biased at a drain voltage of 85 V demonstrates a pulsed wave saturated output power of 94 W, a linear gain of 11.7 dB, and a maximum power added efficiency of 24.3% at 3.4 GHz. These results are improved compared with those of the conventional single p-buffer MESFET fabricated in this work using the same process. A radio-frequency power output greater than 4.7 W/mm is achieved, showing the potential as a high-voltage operation device for high-power solid-state amplifier applications.

Keywords: dual p-buffer layer silicon carbide MESFETs electron confinement

Received: 18 May 2012
Revised: 20 June 2012
Accepted manuscript online:

PACS:

73.40.Sx

(Metal-semiconductor-metal structures)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61076072).

Corresponding Authors: Deng Xiao-Chuan
E-mail: xcdeng@uestc.edu.cn

Cite this article:

Deng Xiao-Chuan (邓小川), Sun He (孙鹤), Rao Cheng-Yuan (饶成元), Zhang Bo (张波) High-power SiC MESFET using dual p-buffer layer for S-band power amplifier 2013 Chin. Phys. B 22 017302

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High-power SiC MESFET using dual p-buffer layer for S-band power amplifier

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