Electrical characteristics of AlInN/GaN HEMTs under cryogenic operation

doi:10.1088/1674-1056/22/1/017202

Abstract Electrical properties of AlInN/GaN high-electron mobility transistor (HEMT) on a sapphire substrate are investigated in a cryogenic temperature range from 295 K down to 50 K. It is shown that drain saturation current and conductance increase as transistor operation temperature decreases. Self-heating effect is observed over the entire range of temperature under high power consumption. The dependence of channel electron mobility on electron density is investigated in detail. It is found that aside from Coulomb scattering, electrons that have been pushed away from the AlInN/GaN interface into bulk GaN substrate at a large reverse gate voltage are also responsible for the electron mobility drop with the decrease of electron density.

Keywords: AlInN/GaN heterostructure high-electron mobility transistor (HEMT) cryogenic temperature two-dimensional electron gas (2DEG) mobility

Received: 11 May 2012
Revised: 11 June 2012
Accepted manuscript online:

PACS:	72.80.Ey	(III-V and II-VI semiconductors)
	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61204018).

Corresponding Authors: Xu Jian
E-mail: jianxu@engr.psu.edu

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Zhang Xue-Feng (张雪锋), Wang Li (王莉), Liu Jie (刘杰), Wei Lai (魏崃), Xu Jian (许键) Electrical characteristics of AlInN/GaN HEMTs under cryogenic operation 2013 Chin. Phys. B 22 017202

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Electrical characteristics of AlInN/GaN HEMTs under cryogenic operation

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