Parasitic bipolar amplification in single event transient and its temperature dependence

doi:10.1088/1674-1056/21/9/099401

Abstract Using three-dimensional technology computer-aided design (TCAD) simulation, parasitic bipolar amplification in single event transient (SET) current of single transistor and its temperature dependence are studied. We quantify the contributions of different current components in SET current pulse, and it is found that the proportion of parasitic bipolar amplification in total collected charge is about 30% in both 130-nm and 90-nm technologies. The temperature dependence of parasitic bipolar amplification and the mechanism of SET pulse are also investigated and quantified. The results show that the proportion of charge induced by parasitic bipolar increases with rising temperature, which illustrates that the parasitic bipolar amplification plays an important role in the charge collection of single transistor.

Keywords: single event transient parasitic bipolar amplification funnel-aided drift temperature dependence

Received: 27 February 2012
Revised: 26 April 2012
Accepted manuscript online:

PACS:	94.05.Dd	(Radiation processes)
	85.30.Tv	(Field effect devices)
	02.60.Cb	(Numerical simulation; solution of equations)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60836004, 61076025, and 61006070) and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20104307120006).

Corresponding Authors: Liu Zheng
E-mail: zhliu1982@hotmail.com

Cite this article:

Liu Zheng (刘征), Chen Shu-Ming (陈书明), Chen Jian-Jun (陈建军), Qin Jun-Rui (秦军瑞), Liu Rong-Rong (刘蓉容) Parasitic bipolar amplification in single event transient and its temperature dependence 2012 Chin. Phys. B 21 099401

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