High-photosensitivity polymer thin-film transistors based on poly(3-hexylthiophene)

doi:10.1088/1674-1056/21/8/088503

Abstract Polymer thin-film transistors (PTFTs) based on poly(3-hexylthiophene) are fabricated by spin-coating process, and their photo-sensing characteristics are investigated under steady-state visible-light illumination. The photosensitivity of the device is strongly modulated by gate voltage under various illuminations. When the device is in the subthreshold operating mode, a significant increase in its drain current is observed with a maximum photosensitivity of 1.7× 10³ at an illumination intensity of 1200 lx, and even with a relatively high photosensitivity of 611 at a low illumination intensity of 100 lx. However, when the device is in the on-state operating mode, the photosensitivity is very low: only 1.88 at an illumination intensity of 1200 lx for a gate voltage of -20 V and a drain voltage of -20 V. The results indicate that the devices could be used as photo-detectors or sensors in the range of visible light. The modulation mechanism of the photosensitivity in the PTFT is discussed in detail.

Keywords: semiconducting polymer thin film transistor photosensitivity phototransistor

Received: 28 November 2011
Revised: 27 April 2012
Accepted manuscript online:

PACS:	85.30.Tv	(Field effect devices)
	85.60.Dw	(Photodiodes; phototransistors; photoresistors)
	73.61.Ph	(Polymers; organic compounds)

Fund: Projected supported by the National Natural Science Foundation of China (Grant No. 61076113), the Natural Science Foundation of Guangdong Province, China (Grant No. 8451064101000257), and the Research Grants Council (RGC) of Hong Kong Special Administrative Region (HKSAR), China (Grant No. HKU 7133/07E).

Corresponding Authors: Liu Yu-Rong
E-mail: phlyr@scut.edu.cn

Cite this article:

Liu Yu-Rong (刘玉荣), Lai Pei-Tao (黎沛涛), Yao Ruo-He (姚若河 ) High-photosensitivity polymer thin-film transistors based on poly(3-hexylthiophene) 2012 Chin. Phys. B 21 088503

[1]	Tzeng K L, Meng H F, Tzeng M F, Chen Y S, Liu C H, Horng S F, Yang Y Z, Chang S M, Hsu C S and Chi C C 2004 Appl. Phys. Lett. 84 619
[2]	Liu Y X and Cui T H 2005 Solid-State Electronics 49 445
[3]	Fukuda H, Ise M, Kogure T and Takano N 2004 Thin Solid Films 464-465 441
[4]	Halls J J M, Walsh C A, Greenham N C, Marseglia E A, Friend R H, Moratti S C and Holmes A B 1995 Nature 376 498
[5]	Peumans P, Yakimov A and Forrest S R 2003 J. Appl. Phys. 93 3693
[6]	Chikamatsu M, Ichino Y, Takada N, Yoshida M, Kamata T and Yase K 2002 Appl. Phys. Lett. 81 769
[7]	Sze S M 1981 Physics of Semiconductor Devices 2nd edn. (New York: John Wiley & Sons, Inc.) p. 783
[8]	Lucas B, El Amrani A, Chakaroun M, Ratier B, Antony R and Moliton A 2009 Thin Solid Films 517 6280
[9]	Noh Y Y, Kim D Y, Yoshida Y, Yase K, Jung B J, Lim E and Shim H K 2005 Appl. Phys. Lett. 86 043501
[10]	Narayan K S and Kumar N 2001 Appl. Phys. Lett. 79 1891
[11]	Hamilton M C, Martin S and Kanicki J 2004 IEEE Trans. Electron Dev. 51 877
[12]	Sirringhaus H, Tessler N and Friend R H 1998 Science 280 1741
[13]	Pal T, Arif M and Khondaker S I 2010 Nanotechnology 21 325201
[14]	Yan F, Li J H and Mok S M 2009 J. Appl. Phys. 106 074501
[15]	Liu Y R, Wu L M, Lai P T and Zuo Q Y 2009 Semicond. Sci. Technol. 24 095013
[16]	Hamilton M C and Kanicki J 2004 IEEE J. Select. Topics Quantum Electron. 10 840
[17]	Wang X, Wasapinyokul K, Tan W D, Rawcliffe R, Campbell A J and Bradley D D C 2010 J. Appl. Phys. 107 024509
[18]	Xie Z, Abdou M S A, Lu X, Deen M J and Holdcroft S 1992 Can. J. Phys. 70 1171
[19]	Wang G M, Swensen J, Moses D and Heeger A J 2003 J. Appl. Phys. 93 6137
[20]	Kiguchi M, Nakayama M and Shimada T 2005 Phys. Rev. B 71 035332
[21]	Antoniadis H, Rothberg L J, Papadimitrakopoulos F, Yan M, Gavin M E and Abkowitz M A 1994 Phys. Rev. B 50 14911
[22]	Dutta S and Narayan K S 2004 Adv. Mater. 16 2151

[1]	High-sensitive phototransistor based on vertical HfSe₂/MoS₂ heterostructure with broad-spectral response Wen Deng(邓文), Li-Sheng Wang(汪礼胜), Jia-Ning Liu(刘嘉宁), Tao Xiang(相韬), and Feng-Xiang Chen(陈凤翔). Chin. Phys. B, 2022, 31(12): 128502.
[2]	Anisotropic photoresponse of layered rhenium disulfide synaptic transistors Chunhua An(安春华), Zhihao Xu(徐志昊), Jing Zhang(张璟), Enxiu Wu(武恩秀), Xinli Ma(马新莉), Yidi Pang(庞奕荻), Xiao Fu(付晓), Xiaodong Hu(胡晓东), Dong Sun(孙栋), Jinshui Miao(苗金水), and Jing Liu(刘晶). Chin. Phys. B, 2021, 30(8): 088503.
[3]	High-throughput fabrication and semi-automated characterization of oxide thin film transistors Yanbing Han(韩炎兵), Sage Bauers, Qun Zhang(张群), Andriy Zakutayev. Chin. Phys. B, 2020, 29(1): 018502.
[4]	Effects of active layer thickness on performance and stability of dual-active-layer amorphous InGaZnO thin-film transistors Wenxing Huo(霍文星), Zengxia Mei(梅增霞), Yicheng Lu(卢毅成), Zuyin Han(韩祖银), Rui Zhu(朱锐), Tao Wang(王涛), Yanxin Sui(隋妍心), Huili Liang(梁会力), Xiaolong Du(杜小龙). Chin. Phys. B, 2019, 28(8): 087302.
[5]	Negative gate bias stress effects on conduction and low frequency noise characteristics in p-type poly-Si thin-film transistors Chao-Yang Han(韩朝阳), Yuan Liu(刘远), Yu-Rong Liu(刘玉荣), Ya-Yi Chen(陈雅怡), Li Wang(王黎), Rong-Sheng Chen(陈荣盛). Chin. Phys. B, 2019, 28(8): 088502.
[6]	Degradation of current-voltage and low frequency noise characteristics under negative bias illumination stress in InZnO thin film transistors Li Wang(王黎), Yuan Liu(刘远), Kui-Wei Geng(耿魁伟), Ya-Yi Chen(陈雅怡), Yun-Fei En(恩云飞). Chin. Phys. B, 2018, 27(6): 068504.
[7]	Positive gate bias stress-induced hump-effect in elevated-metal metal-oxide thin film transistors Dong-Yu Qi(齐栋宇), Dong-Li Zhang(张冬利), Ming-Xiang Wang(王明湘). Chin. Phys. B, 2017, 26(12): 128101.
[8]	Spectral response modeling and analysis of p-n-p In0.53Ga_0.47As/InP HPTs Jun Chen(陈俊), Jiabing Lv(吕加兵). Chin. Phys. B, 2016, 25(9): 097202.
[9]	Improvement in the electrical performance and bias-stress stability of dual-active-layered silicon zinc oxide/zinc oxide thin-film transistor Yu-Rong Liu(刘玉荣), Gao-Wei Zhao(赵高位), Pai-To Lai(黎沛涛), Ruo-He Yao(姚若河). Chin. Phys. B, 2016, 25(8): 088503.
[10]	Technology demonstration of a novel poly-Si nanowire thin film transistor Libin Liu(刘立滨), Renrong Liang(梁仁荣), Bolin Shan(单柏霖), Jun Xu(许军), Jing Wang(王敬). Chin. Phys. B, 2016, 25(11): 118504.
[11]	Performance improvement in polymeric thin film transistors using chemically modified both silver bottom contacts and dielectric surfaces Xie Ying-Tao (谢应涛), Ouyang Shi-Hong (欧阳世宏), Wang Dong-Ping (王东平), Zhu Da-Long (朱大龙), Xu Xin (许鑫), Tan Te (谭特), Fong Hon-Hang (方汉铿). Chin. Phys. B, 2015, 24(9): 096803.
[12]	Electronic mobility in the high-carrier-density limit ofion gel gated IDTBT thin film transistors Bao Bei (包蓓), Shao Xian-Yi (邵宪一), Tan Lu (谭璐), Wang Wen-He (王文河), Wu Yue-Shen (吴越珅), Wen Li-Bin (文理斌), Zhao Jia-Qing (赵家庆), Tang Wei (唐伟), Zhang Wei-Min (张为民), Guo Xiao-Jun (郭小军), Wang Shun (王顺), Liu Ying (刘荧). Chin. Phys. B, 2015, 24(9): 098103.
[13]	Influence of white light illumination on the performance of a-IGZO thin film transistor under positive gate-bias stress Tang Lan-Feng (汤兰凤), Yu Guang (于广), Lu Hai (陆海), Wu Chen-Fei (武辰飞), Qian Hui-Min (钱慧敏), Zhou Dong (周东), Zhang Rong (张荣), Zheng You-Dou (郑有炓), Huang Xiao-Ming (黄晓明). Chin. Phys. B, 2015, 24(8): 088504.
[14]	Analysis on high speed response of a uni-traveling-carrier double hetero-junction phototransistor Jiang Zhi-Yun (江之韵), Xie Hong-Yun (谢红云), Zhang Liang-Hao (张良浩), Zhang Wan-Rong (张万荣), Hu Rui-Xin (胡瑞心), Huo Wen-Juan (霍文娟). Chin. Phys. B, 2015, 24(4): 048504.
[15]	Enhancing UV photosensitivity of ZnO UV nanosensor using electrical stimulation at megahertz frequency Li De-Zhao (李德钊), Zhu Rong (朱荣). Chin. Phys. B, 2013, 22(1): 018502.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

High-photosensitivity polymer thin-film transistors based on poly(3-hexylthiophene)

Cite this article:

Online attention