The influences of model parameters on the characteristics of memristors

doi:10.1088/1674-1056/21/4/048401

Abstract As the fourth passive circuit component, a memristor is a nonlinear resistor that can “remember” the amount of charge passing through it. The characteristic of “remembering” the charge and non-volatility makes memristors great potential candidates in many fields. Nowadays, only a few groups have the ability to fabricate memristors, and most researchers study them by theoretic analysis and simulation. In this paper, we first analyse the theoretical base and characteristics of memristors, then use a simulation program with integrated circuit emphasis as our tool to simulate the theoretical model of memristors and change the parameters in the model to see the influence of each parameter on the characteristics. Our work supplies researchers engaged in memristor-based circuits with advice on how to choose the proper parameters.

Keywords: memristor I-V characteristics simulation program with integrated circuit emphasis

Received: 24 July 2011
Revised: 30 September 2011
Accepted manuscript online:

PACS:	84.32.-y	(Passive circuit components)
	89.20.Ff	(Computer science and technology)
	84.37.+q	(Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.))

Fund: Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61003082) and the Science Fund for Creative Research Groups of the National Natural Science Foundation of China (Grant No. 60921062).

Corresponding Authors: Zhou Jing,jingzhou0210@126.com
E-mail: jingzhou0210@126.com

Cite this article:

Zhou Jing(周静) and Huang Da(黄达) The influences of model parameters on the characteristics of memristors 2012 Chin. Phys. B 21 048401

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The influences of model parameters on the characteristics of memristors

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