Investigation of inhomogeneous barrier height of Au/Bi4Ti3O12/n-Si structure through Gaussian distribution of barrier height

doi:10.1088/1674-1056/21/12/128502

Abstract Au/Bi₄Ti₃O₁₂/n-Si structure is fabricated in order to investigate its current-voltage (I-V) characteristics in a temperature range of 300 K-400 K. Obtained I-V data are evaluated by thermionic emission (TE) theory. Zero-bias barrier height (Φ_B0) and ideality factor (n) calculated from I-V characteristics, are found to be temperature-dependent such that Φ_B0 increases with temperature increasing, whereas n decreases. Obtained temperature dependence of Φ_B0 and linearity in Φ_B0 versus n plot, together with lower barrier height and Richardson constant values obtained from Richardson plot, indicate that the barrier height of the structure is inhomogeneous in nature. Therefore, I-V characteristics are explained on the basis of Gaussian distribution of barrier height.

Keywords: Bi₄Ti₃O₁₂ I-V characterization temperature dependence Gaussian distribution

Received: 19 June 2012
Revised: 24 July 2012
Accepted manuscript online:

PACS:	85.30.Hi	(Surface barrier, boundary, and point contact devices)
	85.30.Kk	(Junction diodes)
	84.37.+q	(Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.))
	73.40.-c	(Electronic transport in interface structures)

Fund: Project supported by the Düzce University Scientific Research Project (Grant Nos. 2010.05.02.056 and 2012.05.02.110).

Corresponding Authors: M. Gökcen
E-mail: muharremgokcen@duzce.edu.tr

Cite this article:

M. Gökcen, M. Yildirim Investigation of inhomogeneous barrier height of Au/Bi₄Ti₃O₁₂/n-Si structure through Gaussian distribution of barrier height 2012 Chin. Phys. B 21 128502

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Investigation of inhomogeneous barrier height of Au/Bi4Ti3O12/n-Si structure through Gaussian distribution of barrier height

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Investigation of inhomogeneous barrier height of Au/Bi₄Ti₃O₁₂/n-Si structure through Gaussian distribution of barrier height