A device model for thin silicon-on-insulator SiGe heterojunction bipolar transistors with saturation effects

doi:10.1088/1674-1056/20/9/098501

Abstract In this paper, we describe the saturation effect of a silicon germanium (SiGe) heterojunction bipolar transistor (HBT) fabricated on a thin silicon-on-insulator (SOI) with a step-by-step derivation of the model formulation. The collector injection width, the internal base—collector bias, and the hole density at the base—collector junction interface are analysed by considering the unique features of the internal and the external parts of the collector, as they are different from those of a bulk counterpart.

Keywords: saturation effect heterojunction bipolar transistor SiGe silicon-on-insulator

Received: 01 April 2011
Revised: 09 May 2011
Accepted manuscript online:

PACS:	85.30.Pq	(Bipolar transistors)
	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.30.-z	(Semiconductor devices)

Cite this article:

Xu Xiao-Bo(徐小波), Xu Kai-Xuan(徐凯选), Zhang He-Ming(张鹤鸣), and Qin Shan-Shan(秦珊珊) A device model for thin silicon-on-insulator SiGe heterojunction bipolar transistors with saturation effects 2011 Chin. Phys. B 20 098501

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A device model for thin silicon-on-insulator SiGe heterojunction bipolar transistors with saturation effects

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