Multiferroic ZnO obtained by substituting oxygen with nitrogen

doi:10.1088/1674-1056/20/8/087505

Abstract N-doped ZnO films were prepared in nitrogen plasma by pulsed laser deposition. Clear room temperature ferromagnetism has been observed in the film prepared at a substrate temperature of 500 °C. The structural characterizations of X-ray diffraction, Raman, and X-ray photoelectron spectroscopy confirm the substitution of O by N in ZnO, which has been considered to be the origin of the observed ferromagnetism. Furthermore, ferroelectricity has been observed at room temperature by piezoelectric force microscopy, indicating the potential multiferroic applications.

Keywords: multiferroics diluted magnetic semiconductor ZnO

Received: 10 February 2011
Revised: 15 March 2011
Accepted manuscript online:

PACS:	75.85.+t	(Magnetoelectric effects, multiferroics)
	75.50.Pp	(Magnetic semiconductors)
	77.55.hf	(ZnO)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 50802041 and 50872050), the National Key Basic Research Program of China (Grant Nos. 2009CB929503 and 2010CB923404), NCET-09-0296 and Southeast University, and partially supported by the Natural Science Foundation of Jiangsu Province of China (Grant No. BK2010421).

Cite this article:

Xu Qing-Yu(徐庆宇), Wen Zheng(温峥), Gao Jin-Long(高锦龙), Wu Di(吴迪), Qiu Teng(邱腾), Tang Shao-Long(唐少龙), and Xu Ming-Xiang(徐明祥) Multiferroic ZnO obtained by substituting oxygen with nitrogen 2011 Chin. Phys. B 20 087505

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Multiferroic ZnO obtained by substituting oxygen with nitrogen

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