Study of the lateral distribution of neodymium ions implanted in silicon

doi:10.1088/1674-1056/20/8/086103

Abstract Due to the need to reduce electronic device sizes, it is very important to consider the depth and lateral distribution of ions implanted into a crystalline target. This paper reports that Nd ions with energies of 200 keV to 500 keV and dose of 5 × 10¹⁵ ions/cm² are implanted into Si single crystals at room temperature under the angles of 0°, 30°, and 45°, respectively. The lateral spreads of 200 keV—500 keV Nd ions implanted in Si sample are measured by Rutherford backscattering technique. The results show that the measured values are in good agreement with those obtained from the prediction of SRIM2010 codes.

Keywords: Nd ion implantation silicon lateral distribution Rutherford backscattering technique

Received: 08 December 2010
Revised: 26 January 2011
Accepted manuscript online:

PACS:	61.72.sh	(Impurity distribution)
	61.72.up	(Other materials)
	82.80.Yc	(Rutherford backscattering (RBS), and other methods ofchemical analysis)
	85.40.Ry	(Impurity doping, diffusion and ion implantation technology)

Fund: Project supported by the Shandong Jianzhu University Foundation, China (Grant No. XN070109) and the National Natural Science Foundation of China (Grant No. 51042002).

Cite this article:

Qin Xi-Feng(秦希峰), Li Hong-Zhen(李洪珍), Li Shuang(李双), Liang Yi(梁毅), Wang Feng-Xiang(王凤翔), Fu Gang(付刚), and Ji Yan-Ju(季艳菊) Study of the lateral distribution of neodymium ions implanted in silicon 2011 Chin. Phys. B 20 086103

[1]	Chen C Y, Chen W D, Wang Y Q, Song S F and Xu Z J 2003 Acta Phys. Sin. 52 736 (in Chinese)
[2]	Ennen H, Schneider J, Pomrenke G and Axmann A 1983 Appl. Phys. Lett. 43 943
[3]	Wang J Z, Shi Z Q, Lou H N, Zhang X L, Zuo Z W, Pu L, Ma E, Zhang R, Zheng Y L, Lu F and Shi Y 2009 Acta Phys. Sin. bf 58 4243 (in Chinese)
[4]	Liang J J, Chen W D, Wang Y Q, Chang Y and Wang Z G 2000 Chin. Phys. 9 783
[5]	Hansson G V, Du W X, Elfving A and Duteil F 2001 Appl. Phys. Lett. 78 2104
[6]	Ding W C, Liu Y, Zhang Y, Guo J C, Zuo Y H, Cheng B W, Yu J Z and Wang Q M 2009 Chin. Phys. B 18 3044
[7]	Lei H B, Yang Q Q and Wang Q M 1998 Acta Phys. Sin. 47 1201 (in Chinese)
[8]	Wang K M, Shi B R, Guo H Y, Wang W and Ding P J 1996 Mater. Sci. Eng. B 39 133
[9]	Qin X F, Chen M, Wang X L, Liang Y and Zhang S M 2010 Chin. Phys. B 19 113403
[10]	Fu Y C, Li B S, Yang Y T, Zhang C H, Zhang H H and Zhou L H 2009 Acta Phys. Sin. 58 3302 (in Chinese)
[11]	Biersack J P 1982 Z. Phys. A 305 95
[12]	Tan N and Zhang Q Y 2006 Chin. Phys. 15 2165
[13]	Qin X F, Wang F X, Liang Y, Fu G and Zhao Y M 2010 Acta Phys. Sin. 59 6382 (in Chinese)
[14]	Macfarlane R M, Tong F, Silversmith A J and Lenth W 1988 Appl. Phys. Lett. 52 1130
[15]	Lenth W and Macfarlane R M 1990 J. Lumin. 45 346
[16]	Ziegler J F http://www.srim.org
[17]	Chu W K, Mayer J W and Nicolet M A 1978 Backscattering Spectrometry (New York: Academic) Chap. 5, p. 137
[18]	Furukawa S and Matsumyra H 1973 Appl. Phys. 22 97

[1]	Enhancement of holding voltage by a modified low-voltage trigger silicon-controlled rectifier structure for electrostatic discharge protection Yuankang Chen(陈远康), Yuanliang Zhou(周远良), Jie Jiang(蒋杰), Tingke Rao(饶庭柯), Wugang Liao(廖武刚), and Junjie Liu(刘俊杰). Chin. Phys. B, 2023, 32(2): 028502.
[2]	Experiment and simulation on degradation and burnout mechanisms of SiC MOSFET under heavy ion irradiation Hong Zhang(张鸿), Hongxia Guo(郭红霞), Zhifeng Lei(雷志锋), Chao Peng(彭超), Zhangang Zhang(张战刚), Ziwen Chen(陈资文), Changhao Sun(孙常皓), Yujuan He(何玉娟), Fengqi Zhang(张凤祁), Xiaoyu Pan(潘霄宇), Xiangli Zhong(钟向丽), and Xiaoping Ouyang(欧阳晓平). Chin. Phys. B, 2023, 32(2): 028504.
[3]	Sub-stochiometric MoO_x by radio-frequency magnetron sputtering as hole-selective passivating contacts for silicon heterojunction solar cells Xiufang Yang(杨秀芳), Shengsheng Zhao(赵生盛), Qian Huang(黄茜), Cao Yu(郁超), Jiakai Zhou(周佳凯), Xiaoning Liu(柳晓宁), Xianglin Su(苏祥林),Ying Zhao(赵颖), and Guofu Hou(侯国付). Chin. Phys. B, 2022, 31(9): 098401.
[4]	Improvement on short-circuit ability of SiC super-junction MOSFET with partially widened pillar structure Xinxin Zuo(左欣欣), Jiang Lu(陆江), Xiaoli Tian(田晓丽), Yun Bai(白云), Guodong Cheng(成国栋), Hong Chen(陈宏), Yidan Tang(汤益丹), Chengyue Yang(杨成樾), and Xinyu Liu(刘新宇). Chin. Phys. B, 2022, 31(9): 098502.
[5]	Magnetic properties of oxides and silicon single crystals Zhong-Xue Huang(黄忠学), Rui Wang(王瑞), Xin Yang(杨鑫), Hao-Feng Chen(陈浩锋), and Li-Xin Cao(曹立新). Chin. Phys. B, 2022, 31(8): 087501.
[6]	A 4H-SiC trench MOSFET structure with wrap N-type pillar for low oxide field and enhanced switching performance Pei Shen(沈培), Ying Wang(王颖), and Fei Cao(曹菲). Chin. Phys. B, 2022, 31(7): 078501.
[7]	Assessing the effect of hydrogen on the electronic properties of 4H-SiC Yuanchao Huang(黄渊超), Rong Wang(王蓉), Yiqiang Zhang(张懿强), Deren Yang(杨德仁), and Xiaodong Pi(皮孝东). Chin. Phys. B, 2022, 31(5): 056108.
[8]	Comparative study of high temperature anti-oxidation property of sputtering deposited stoichiometric and Si-rich SiC films Hang-Hang Wang(王行行), Wen-Qi Lu(陆文琪), Jiao Zhang(张娇), and Jun Xu(徐军). Chin. Phys. B, 2022, 31(4): 048103.
[9]	Impact of STI indium implantation on reliability of gate oxide Xiao-Liang Chen(陈晓亮), Tian Chen(陈天), Wei-Feng Sun(孙伟锋), Zhong-Jian Qian(钱忠健), Yu-Dai Li(李玉岱), and Xing-Cheng Jin(金兴成). Chin. Phys. B, 2022, 31(2): 028505.
[10]	Bright 547-dimensional Hilbert-space entangled resource in 28-pair modes biphoton frequency comb from a reconfigurable silicon microring resonator Qilin Zheng(郑骑林), Jiacheng Liu(刘嘉成), Chao Wu(吴超), Shichuan Xue(薛诗川), Pingyu Zhu(朱枰谕), Yang Wang(王洋), Xinyao Yu(于馨瑶), Miaomiao Yu(余苗苗), Mingtang Deng(邓明堂), Junjie Wu(吴俊杰), and Ping Xu(徐平). Chin. Phys. B, 2022, 31(2): 024206.
[11]	A new direct band gap silicon allotrope o-Si32 Xin-Chao Yang(杨鑫超), Qun Wei(魏群), Mei-Guang Zhang(张美光), Ming-Wei Hu(胡明玮), Lin-Qian Li(李林茜), and Xuan-Min Zhu(朱轩民). Chin. Phys. B, 2022, 31(2): 026104.
[12]	High efficiency, small size, and large bandwidth vertical interlayer waveguide coupler Shao-Yang Li(李绍洋), Liang-Liang Wang(王亮亮), Dan Wu(吴丹), Jin You(游金), Yue Wang(王玥), Jia-Shun Zhang(张家顺), Xiao-Jie Yin(尹小杰), Jun-Ming An(安俊明), and Yuan-Da Wu(吴远大). Chin. Phys. B, 2022, 31(2): 024203.
[13]	Characteristics of secondary electron emission from few layer graphene on silicon (111) surface Guo-Bao Feng(封国宝), Yun Li(李韵), Xiao-Jun Li(李小军), Gui-Bai Xie(谢贵柏), and Lu Liu(刘璐). Chin. Phys. B, 2022, 31(10): 107901.
[14]	Construction and mechanism analysis on nanoscale thermal cloak by in-situ annealing silicon carbide film Jian Zhang(张健), Hao-Chun Zhang(张昊春), Zi-Liang Huang(黄子亮), Wen-Bo Sun(孙文博), and Yi-Yi Li(李依依). Chin. Phys. B, 2022, 31(1): 014402.
[15]	Bandwidth-tunable silicon nitride microring resonators Jiacheng Liu(刘嘉成), Chao Wu(吴超), Gongyu Xia(夏功榆), Qilin Zheng(郑骑林), Zhihong Zhu(朱志宏), and Ping Xu(徐平). Chin. Phys. B, 2022, 31(1): 014201.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Study of the lateral distribution of neodymium ions implanted in silicon

Cite this article:

Online attention