Early effect modeling of silicon-on-insulator SiGe heterojunction bipolar transistors

doi:10.1088/1674-1056/20/5/058502

Abstract Silicon germanium (SiGe) heterojunction bipolar transistor (HBT) on thin silicon-on-insulator (SOI) has recently been demonstrated and integrated into the latest SOI BiCMOS technology. The Early effect of the SOI SiGe HBT is analysed considering vertical and horizontal collector depletion, which is different from that of a bulk counterpart. A new compact formula of the Early voltage is presented and validated by an ISE TCAD simulation. The Early voltage shows a kink with the increase of the reverse base–collector bias. Large differences are observed between SOI devices and their bulk counterparts. The presented Early effect model can be employed for a fast evaluation of the Early voltage and is useful to the design, the simulation and the fabrication of high performance SOI SiGe devices and circuits.

Keywords: heterojunction bipolar transistor (HBT) SiGe silicon-on-insulator Early effect

Received: 24 December 2010
Revised: 12 January 2011
Accepted manuscript online:

PACS:	85.30.Pq	(Bipolar transistors)
	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.30.-z	(Semiconductor devices)

Fund: Project supported by the National Ministries and Commissions (Grant Nos. 51308040203 and 6139801), the Fundamental Research Funds for the Central Universities of China (Grant Nos. 72105499 and 72104089), and the Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 2010JQ8008).

Cite this article:

Xu Xiao-Bo (徐小波), Zhang He-Ming (张鹤鸣), Hu Hui-Yong (胡辉勇), Ma Jian-Li (马建立) Early effect modeling of silicon-on-insulator SiGe heterojunction bipolar transistors 2011 Chin. Phys. B 20 058502

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Early effect modeling of silicon-on-insulator SiGe heterojunction bipolar transistors

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