Comparison of nitride-based dual-wavelength light- emitting diodes with an InAlN electron-blocking layer and with p-type doped barriers

doi:10.1088/1674-1056/20/4/048502

Abstract The advantages of nitride-based dual-wavelength light-emitting diodes (LEDs) with an InAlN electron blocking layer (EBL) are studied. The emission spectra, carrier concentration in the quantum wells (QWs), energy band and internal quantum efficiency (IQE) are investigated. The simulation results indicate that an LED with an InAlN EBL performs better over a conventional LED with an AlGaN EBL and an LED with p-type-doped QW barriers. All of the advantages are due to the enhancement of carrier confinement and the lower electron leakage current. The simulation results also show that the efficiency droop is markedly improved and the luminous intensity is greatly enhanced when an InAlN EBL is used.

Keywords: InAlN electron-blocking layer p-type doped barriers numerical simulation dual-wavelength LED

Received: 10 October 2010
Revised: 28 November 2010
Accepted manuscript online:

PACS:	85.60.Jb	(Light-emitting devices)
	85.50.-n	(Dielectric, ferroelectric, and piezoelectric devices)
	87.15.A-	(Theory, modeling, and computer simulation)
	78.60.Fi	(Electroluminescence)

Fund: Project supported by the Project of Combination of Production and Research Guided by Ministry in 2009, China (Grant No. 2009B090300338), the Doctorate Foundation of the State Education Ministry of China (Grant No. 350163) and the Crucial Field and Key Breakthrough Project of Guangdong Province and Hongkong, China (Grant No. 2007A010501008).

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Zhang Yun-Yan(张运炎) and Fan Guang-Han(范广涵) Comparison of nitride-based dual-wavelength light- emitting diodes with an InAlN electron-blocking layer and with p-type doped barriers 2011 Chin. Phys. B 20 048502

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Comparison of nitride-based dual-wavelength light- emitting diodes with an InAlN electron-blocking layer and with p-type doped barriers

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