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Chin. Phys. B, 2011, Vol. 20(11): 117701    DOI: 10.1088/1674-1056/20/11/117701
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Local leakage current behaviours of BiFeO3 films

Zou Cheng(邹成)a)b)c), Chen Bin(陈斌) b)c)†, Zhu Xiao-Jian(朱小健)b)c), Zuo Zheng-Hu(左正笏)b)c), Liu Yi-Wei(刘宜伟) b)c), Chen Yuan-Fu(陈远富)a), Zhan Qing-Feng(詹清峰)b)c), and Li Run-Wei(李润伟)b)c)
a State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China; b Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China; c Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China 
Abstract  The leakage current behaviours of polycrystalline BiFeO3 thin films are investigated by using both conductive atomic force microscopy and current-voltage characteristic measurements. The local charge transport pathways are found to be located mainly at the grain boundaries of the films. The leakage current density can be tuned by changing the post-annealing temperature, the annealing time, the bias voltage and the light illumination, which can be used to improve the performances of the ferroelectric devices based on the BiFeO3 films. A possible leakage mechanism is proposed to interpret the charge transports in the polycrystalline BiFeO3 films.
Keywords:  polycrystalline BiFeO3 thin films      local leakage current      conductive atomic force microscopy  
Received:  07 June 2011      Revised:  19 June 2011      Accepted manuscript online: 
PACS:  77.55.Nv (Multiferroic/magnetoelectric films)  
  73.50.Pz (Photoconduction and photovoltaic effects)  
  73.50.-h (Electronic transport phenomena in thin films)  
Fund: Project supported by the Chinese Academy of Sciences, the State Key Project of Fundamental Research of China, and the Natural Science Foundation of Ningbo, China.

Cite this article: 

Zou Cheng(邹成), Chen Bin(陈斌), Zhu Xiao-Jian(朱小健), Zuo Zheng-Hu(左正笏), Liu Yi-Wei(刘宜伟), Chen Yuan-Fu(陈远富), Zhan Qing-Feng(詹清峰), and Li Run-Wei(李润伟) Local leakage current behaviours of BiFeO3 films 2011 Chin. Phys. B 20 117701

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