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Chin. Phys. B, 2011, Vol. 20(1): 018501    DOI: 10.1088/1674-1056/20/1/018501
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Thermal stability improvement of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations using non-uniform finger spacing

Chen Liang, Zhang Wan-Rong, Jin Dong-Yue, Shen Pei, Xie Hong-Yun, Ding Chun-Bao, Xiao Ying, Sun Bo-Tao, Wang Ren-Qing
College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
Abstract  A method of non-uniform finger spacing is proposed to enhance thermal stability of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations. Temperature distribution on the emitter fingers of a multi-finger SiGe heterojunction bipolar transistor is studied using a numerical electro-thermal model. The results show that the SiGe heterojunction bipolar transistor with non-uniform finger spacing has a small temperature difference between fingers compared with a traditional uniform finger spacing heterojunction bipolar transistor at the same power dissipation. What is most important is that the ability to improve temperature non-uniformity is not weakened as power dissipation increases. So the method of non-uniform finger spacing is very effective in enhancing the thermal stability and the power handing capability of power device. Experimental results verify our conclusions.
Keywords:  heterojunction bipolar transistor      thermal coupling      power dissipation     
Received:  26 May 2010      Published:  15 January 2011
PACS:  85.30.De (Semiconductor-device characterization, design, and modeling)  
  72.15.Jf (Thermoelectric and thermomagnetic effects)  
  44.10.+i (Heat conduction)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60776051, 61006059 and 61006044), the Beijing Municipal Natural Science Foundation, China (Grant No. 4082007), and the Beijing Municipal Education Committee, China (Grant Nos. KM200710005015 and KM200910005001).

Cite this article: 

Chen Liang, Zhang Wan-Rong, Jin Dong-Yue, Shen Pei, Xie Hong-Yun, Ding Chun-Bao, Xiao Ying, Sun Bo-Tao, Wang Ren-Qing Thermal stability improvement of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations using non-uniform finger spacing 2011 Chin. Phys. B 20 018501

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