An analytical model for coplanar waveguide on silicon-on-insulator substrate with conformal mapping technique

doi:10.1088/1674-1056/20/1/010210

Abstract In this paper, the authors present an analytical model for coplanar waveguide on silicon-on-insulator substrate. The four-element topological network and the conformal mapping technique are used to analyse the capacitance and the conductance of the sandwich substrate. The validity of the model is verified by the full-wave method and the experimental data. It is found that the inductance, the resistance, the capacitance and the conductance from the analytical model show they are in good agreement with the corresponding values extracted from experimental S-parameter until 10 GHz.

Keywords: coplanar waveguide silicon-on-insulator conformal mapping

Received: 12 June 2010
Revised: 11 August 2010
Accepted manuscript online:

PACS:	02.60.-x	(Numerical approximation and analysis)
	72.60.+g	(Mixed conductivity and conductivity transitions)
	84.40.-x	(Radiowave and microwave (including millimeter wave) technology)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 10775166), and the Zhejiang Provincial Science Technology Foundation, China (Grant No. 2008C31002).

Cite this article:

He Da-Wei(何大伟), Cheng Xin-Hong(程新红), Wang Zhong-Jian(王中健), Xu Da-Wei(徐大伟), Song Zhao-Rui(宋朝瑞), and Yu Yue-Hui(俞跃辉) An analytical model for coplanar waveguide on silicon-on-insulator substrate with conformal mapping technique 2011 Chin. Phys. B 20 010210

[1]	Chen C L and Spector S J 2002 IEEE Electron. Dev. Lett. 23 52
[2]	Eggert D and Huebler P 1997 IEEE Trans. Electron Dev. 44 1981
[3]	Gianesellol F, Gloria D, Montusclat S, Raynaud C, Boret S, Dambrine G, Lepilliet S, Martineau1 B and Pilard R 2007 IEEE/MTT-S Int. Microwave Symp. Honolulu, Hawaii, June 3--8, 2007 p453
[4]	Bedair S S and Wolff I 1992 IEEE Trans. Microw. Theory 40 41
[5]	Schinzinger R and Laura P A A 1991Conformal Mapping Methods and Applications (New York: Elsevier Science Publishing Company Inc.) p266
[6]	Ko J S, Kim B K and Lee K 1997 IEEE Trans. Electron Dev. 44 856
[7]	Gillick M, Robertson I D and Joshi J S 1993 IEEE Trans. Microw. Theory 41 1606
[8]	Gevorgian S, Berg H, Jacobsson H and Lewin T 2003 IEEE Microw. Mag. 4 60
[9]	Kwon Y R and Hietala V M 1987 IEEE Trans. Microw. Theory 35 545
[10]	Ghione G 1993 IEEE Trans. Microw. Theory 41 1499
[11]	Tuncer E, Lee B T, Islam M S and Neikirk D P 1994 IEEE Trans. Microw. Theory 42 1807
[12]	Rautio J C 2000 IEEE Microw. Mag. 1 60
[13]	Koolen M C A M, Geelen J A M and Versleijen M P J G 1991 IEEE 1991 Bipolar Circuits and Technology Meeting Minneapolis, Minnesota, September 9--10, 1991 p188
[14]	Eo Y and Eisenstadt W R 1993 IEEE Trans. Compon. Hybrids Manuf. Technol. 16 555
[15]	Tiemeijer L F, Havens R J, Jansman A B M and Bouttement Y 2005 IEEE Trans. Microw. Theory 53 723 endfootnotesize

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An analytical model for coplanar waveguide on silicon-on-insulator substrate with conformal mapping technique

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