Multi-wafer 3C–SiC heteroepitaxial growth on Si(100) substrates

doi:10.1088/1674-1056/19/8/088101

Abstract Epitaxial growth of semiconductor films in multiple-wafer mode is under vigorous development in order to improve yield output to meet the industry increasing demands. Here we report on results of the heteroepitaxial growth of multi-wafer 3C–SiC films on Si(100) substrates by employing a home-made horizontal hot wall low pressure chemical vapour deposition (HWLPCVD) system which was designed to be have a high-throughput, multi-wafer (3×2-inch) capacity. 3C–SiC film properties of the intra-wafer and the wafer-to-wafer including crystalline morphologies, structures and electronics are characterized systematically. The undoped and the moderate NH₃ doped n-type 3C–SiC films with specular surface are grown in the HWLPCVD, thereafter uniformities of intra-wafer thickness and sheet resistance of the 3C–SiC films are obtained to be 6%～7% and 6.7%～8%, respectively, and within a run, the deviations of wafer-to-wafer thickness and sheet resistance are less than 1% and 0.8%, respectively.

Keywords: 3C–SiC heteroepitaxial multi-wafer uniformity

Received: 13 November 2009
Revised: 22 December 2009
Accepted manuscript online:

PACS:	68.55.A-	(Nucleation and growth)
	68.35.B-	(Structure of clean surfaces (and surface reconstruction))
	71.20.Nr	(Semiconductor compounds)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	89.20.Bb	(Industrial and technological research and development)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60876003 and 60606003) and the Science Foundation of the Chinese Academy of Sciences (Grant No. yz200702).

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Sun Guo-Sheng(孙国胜), Liu Xing-Fang(刘兴昉), Wang Lei(王雷), Zhao Wan-Shun(赵万顺),Yang Ting(杨挺), Wu Hai-Lei(吴海雷), Yan Guo-Guo(闫果果), Zhao Yong-Mei(赵永梅), Ning Jin(宁瑾), Zeng Yi-Ping(曾一平), and Li Jin-Min(李晋闽) Multi-wafer 3C–SiC heteroepitaxial growth on Si(100) substrates 2010 Chin. Phys. B 19 088101

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Multi-wafer 3C–SiC heteroepitaxial growth on Si(100) substrates

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